High Temperature Raman Scattering From Boron Nitride Coatings On Resistively Heated Graphite Surfaces

1989 ◽  
Author(s):  
Gregory J. Exarhos ◽  
Joel W. Schaaf
Keyword(s):  
High Temperature ◽  
Boron Nitride ◽  
Raman Scattering ◽  
Nitride Coatings ◽  
Resistively Heated

Raman scattering from boron nitride coatings at high temperatures

1991 ◽  
Vol 69 (4) ◽  
pp. 2543-2548 ◽  
Author(s):  
Gregory J. Exarhos ◽  
Joel W. Schaaf
Keyword(s):  
Boron Nitride ◽  
Raman Scattering ◽  
High Temperatures ◽  
Nitride Coatings

scholarly journals Boron Nitride Coatings and Materials for use in Aggressive Environments

1997 ◽  
Vol 498 ◽  
Author(s):  
T. M. Besmann ◽  
W. Y. Lee ◽  
J. P. Young ◽  
H. Xiao
Keyword(s):  
High Temperature ◽  
Boron Nitride ◽  
Structural Materials ◽  
Materials Processing ◽  
High Temperature Materials ◽  
Nitride Coatings ◽  
Aluminum Smelting ◽  
Corrosive Environments

ABSTRACTBoron nitride coatings and structures have demonstrated significant resistance to many corrosive environments. These coatings may have application in the protection of sensors needed for measuring a variety of properties such as temperature and chemistry. In addition, boron nitride materials may offer advantages as structural materials in high temperature materials processing. In this study, BN is assessed for use in aluminum smelting.

Atomic Layer Deposited Boron Nitride Nanoscale Films Act as High Temperature Hydrogen Barriers

2021 ◽  
pp. 150428
Author(s):  
Sarah K. Bull ◽  
Theodore A. Champ ◽  
Sai V. Raj ◽  
Robert C. O'Brien ◽  
Charles B. Musgrave ◽  
...  
Keyword(s):  
High Temperature ◽  
Boron Nitride ◽  
Atomic Layer ◽  
Nanoscale Films

Advantages of ultraviolet Raman scattering for high temperature investigations

1998 ◽  
Vol 72 (1) ◽  
pp. 1-3 ◽  
Author(s):  
E. Zouboulis ◽  
D. Renusch ◽  
M. Grimsditch
Keyword(s):  
High Temperature ◽  
Raman Scattering

Cubic Boron Nitride as a New Semiconductor for Optoelectronics: Luminescence Properties and Potentialities

1989 ◽  
Vol 162 ◽  
Author(s):  
Koh Era ◽  
Osamu Mishima
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Visible Region ◽  
Vibrational Structure ◽  
Luminescence Properties ◽  
Optoelectronic Applications ◽  
P Type

ABSTRACTIn cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.

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