High Temperature Characteristic in Electrical Breakdown and Electrical Conduction of Epoxy/Boron-nitride Composite

2012 ◽  
Vol 132 (2) ◽  
pp. 142-147
Author(s):  
Yutaka Takenaka ◽  
Muneaki Kurimoto ◽  
Yoshinobu Murakami ◽  
Masayuki Nagao
Keyword(s):  
High Temperature ◽  
Boron Nitride ◽  
Electrical Conduction ◽  
Electrical Breakdown ◽  
Temperature Characteristic

Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array

2020 ◽  
Vol 41 (9) ◽  
pp. 1158-1164
Author(s):  
Bo LI ◽  
◽  
Zhen-fu WANG ◽  
Bo-cang QIU ◽  
Guo-wen YANG ◽  
...  
Keyword(s):  
High Temperature ◽  
Semiconductor Laser ◽  
High Power ◽  
Temperature Characteristic ◽  
Laser Array ◽  
Power Semiconductor

Electrical conduction in high temperature gases

1964 ◽  
Vol 10 (9) ◽  
pp. 317 ◽  
Author(s):  
D.W. George
Keyword(s):  
High Temperature ◽  
Electrical Conduction

Transient Electrical Conduction of Nylon 6 at High Temperature

1979 ◽  
Vol 18 (5) ◽  
pp. 995-996 ◽  
Author(s):  
Shuhei Nakamura ◽  
Goro Sawa ◽  
Masayuki Ieda
Keyword(s):  
High Temperature ◽  
Electrical Conduction ◽  
Nylon 6

Atomic Layer Deposited Boron Nitride Nanoscale Films Act as High Temperature Hydrogen Barriers

2021 ◽  
pp. 150428
Author(s):  
Sarah K. Bull ◽  
Theodore A. Champ ◽  
Sai V. Raj ◽  
Robert C. O'Brien ◽  
Charles B. Musgrave ◽  
...  
Keyword(s):  
High Temperature ◽  
Boron Nitride ◽  
Atomic Layer ◽  
Nanoscale Films

High-temperature electrical conduction of plasma-treated FEP films

2002 ◽  
Vol 38 (3) ◽  
pp. 846-851
Author(s):  
T. Takanashi ◽  
K. Ikezaki
Keyword(s):  
High Temperature ◽  
Electrical Conduction

Cubic Boron Nitride as a New Semiconductor for Optoelectronics: Luminescence Properties and Potentialities

1989 ◽  
Vol 162 ◽  
Author(s):  
Koh Era ◽  
Osamu Mishima
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Visible Region ◽  
Vibrational Structure ◽  
Luminescence Properties ◽  
Optoelectronic Applications ◽  
P Type

ABSTRACTIn cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.

Poly(methyl methacrylate)/boron nitride nanocomposites with enhanced energy density as high temperature dielectrics

2017 ◽  
Vol 142 ◽  
pp. 139-144 ◽  
Author(s):  
Feihua Liu ◽  
Qi Li ◽  
Zeyu Li ◽  
Yang Liu ◽  
Lijie Dong ◽  
...  
Keyword(s):  
High Temperature ◽  
Energy Density ◽  
Boron Nitride ◽  
Methyl Methacrylate ◽  
Poly Methyl Methacrylate
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