Atomic Layer Deposited Boron Nitride Nanoscale Films Act as High Temperature Hydrogen Barriers

2021 ◽  
pp. 150428
Author(s):  
Sarah K. Bull ◽  
Theodore A. Champ ◽  
Sai V. Raj ◽  
Robert C. O'Brien ◽  
Charles B. Musgrave ◽  
...  
Keyword(s):  
High Temperature ◽  
Boron Nitride ◽  
Atomic Layer ◽  
Nanoscale Films

Cubic Boron Nitride as a New Semiconductor for Optoelectronics: Luminescence Properties and Potentialities

1989 ◽  
Vol 162 ◽  
Author(s):  
Koh Era ◽  
Osamu Mishima
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Visible Region ◽  
Vibrational Structure ◽  
Luminescence Properties ◽  
Optoelectronic Applications ◽  
P Type

ABSTRACTIn cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.

Poly(methyl methacrylate)/boron nitride nanocomposites with enhanced energy density as high temperature dielectrics

2017 ◽  
Vol 142 ◽  
pp. 139-144 ◽  
Author(s):  
Feihua Liu ◽  
Qi Li ◽  
Zeyu Li ◽  
Yang Liu ◽  
Lijie Dong ◽  
...  
Keyword(s):  
High Temperature ◽  
Energy Density ◽  
Boron Nitride ◽  
Methyl Methacrylate ◽  
Poly Methyl Methacrylate

High-Temperature Trench Capacitors, Using Thin-Film ALD Dielectrics

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000130-000133 ◽  
Author(s):  
Dorothee Dietz ◽  
Yusuf Celik ◽  
Andreas Goehlich ◽  
Holger Vogt ◽  
Holger Kappert
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
Automobile Industry ◽  
Elevated Temperatures ◽  
Atomic Layer ◽  
Operating Voltage ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Layer Deposition ◽  
Soft Breakdown

High-temperature passive electronic becomes more and more important, e.g. in the field of deep drilling, aerospace or in automobile industry. For these applications, capacitors are needed, which are able to withstand temperatures up to 300 °C, which exhibit a low leakage current at elevated temperatures, a breakdown voltage above the intended operating voltage and a high capacitive density value. In this paper, investigations of 3D-integration and atomic layer deposition (ALD) techniques to achieve these features are presented. A highly n-doped Si-substrate acts as a bottom electrode. Medium- and high-k dielectrics represent the insulator and the upper electrode consists of Ru, TiN or TiAlCN. The materials can be used at elevated temperatures. At room temperature, the leakage current is less than 10 pA/mm2 without showing a soft-breakdown up to ± 15 V, indicating the absence of Fowler-Nordheim tunneling. At 300 °C and at 3 V the leakage current amounts about 1 nA/mm2 and at 5 V a soft-breakdown is detected.

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