scholarly journals Sample size requirements for estimating effective dose from computed tomography using solid-state metal-oxide-semiconductor field-effect transistor dosimetry

2014 ◽  
Vol 41 (4) ◽  
pp. 042102 ◽  
Author(s):  
Sigal Trattner ◽  
Bin Cheng ◽  
Radoslaw L. Pieniazek ◽  
Udo Hoffmann ◽  
Pamela S. Douglas ◽  
...  
Keyword(s):  
Computed Tomography ◽  
Solid State ◽  
Metal Oxide ◽  
Sample Size ◽  
Effective Dose ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor

scholarly journals Calibration and error analysis of metal-oxide-semiconductor field-effect transistor dosimeters for computed tomography radiation dosimetry

2017 ◽  
Vol 44 (12) ◽  
pp. 6589-6602 ◽  
Author(s):  
Sigal Trattner ◽  
Peter Prinsen ◽  
Jens Wiegert ◽  
Elazar-Lars Gerland ◽  
Efrat Shefer ◽  
...  
Keyword(s):  
Computed Tomography ◽  
Error Analysis ◽  
Metal Oxide ◽  
Field Effect ◽  
Radiation Dosimetry ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor

Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor

1987 ◽  
Vol 65 (8) ◽  
pp. 995-998
Author(s):  
N. G. Tarr
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Potential Drop ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Analytic Approximation ◽  
Effect Transistor ◽  
Long Channel

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.

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