scholarly journals Nonvolatile ferroelectric domain wall memory

2017 ◽  
Vol 3 (6) ◽  
pp. e1700512 ◽  
Author(s):  
Pankaj Sharma ◽  
Qi Zhang ◽  
Daniel Sando ◽  
Chi Hou Lei ◽  
Yunya Liu ◽  
...  
Keyword(s):  
Domain Wall ◽  
Ferroelectric Domain ◽  
Domain Wall Memory

Energy-Efficient Ferroelectric Domain Wall Memory with Controlled Domain Switching Dynamics

2020 ◽  
Vol 12 (40) ◽  
pp. 44998-45004
Author(s):  
Chao Wang ◽  
Jun Jiang ◽  
Xiaojie Chai ◽  
Jianwei Lian ◽  
Xiaobing Hu ◽  
...  
Keyword(s):  
Domain Wall ◽  
Energy Efficient ◽  
Domain Switching ◽  
Ferroelectric Domain ◽  
Switching Dynamics ◽  
Domain Wall Memory

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films

2021 ◽  
Author(s):  
Meng Han Ao ◽  
Si Zheng Zheng ◽  
Qi Lan Zhong ◽  
Wen Di Zhang ◽  
Xu Hou ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Ferroelectric Domain ◽  
Domain Wall Memory

scholarly journals Nonvolatile ferroelectric domain wall memory integrated on silicon

2021 ◽  
Author(s):  
Yuefeng Nie ◽  
Haoying Sun ◽  
Jierong Wang ◽  
Yushu Wang ◽  
Jiahui Gu ◽  
...  
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
Strain Relaxation ◽  
Perovskite Oxides ◽  
Ferroelectric Domain ◽  
Collective Effects ◽  
Promising Candidate ◽  
Nonvolatile Memories ◽  
Low Energy Consumption ◽  
Domain Wall Memory

Abstract Ferroelectric domain wall memories have been proposed as a promising candidate for nonvolatile memories, given their intriguing advantages including low energy consumption and high-density integration. Perovskite oxides possess superior ferroelectric prosperities but perovskite-based domain wall memory integrated on silicon has rarely been reported due to the technical challenges in the sample preparation. Here, we demonstrate a domain wall memory prototype utilizing freestanding BaTiO3 membranes transferred onto silicon. While as-grown BTO films on (001) SrTiO3 substrate are purely c-axis polarized, we find they exhibit distinct in-plane multidomain structures after released from the substrate and integrated onto silicon due to the collective effects from depolarizing field and strain relaxation. Based on the strong in-plane ferroelectricity, conductive domain walls with reading currents reaching 2 nA are observed and can be created artificially, highlighting the great potential of the integration of perovskite oxides with silicon for ferroelectric domain wall memories.

Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers

2020 ◽  
Vol 19 (11) ◽  
pp. 1188-1194 ◽  
Author(s):  
An Quan Jiang ◽  
Wen Ping Geng ◽  
Peng Lv ◽  
Jia-wang Hong ◽  
Jun Jiang ◽  
...  
Keyword(s):  
Domain Wall ◽  
Single Crystals ◽  
Ferroelectric Domain ◽  
Domain Wall Memory

High temperature ferroelectric domain wall memory

2021 ◽  
Vol 856 ◽  
pp. 158155
Author(s):  
Jun Jiang ◽  
Xiaojie Chai ◽  
Chao Wang ◽  
Anquan Jiang
Keyword(s):  
High Temperature ◽  
Domain Wall ◽  
Ferroelectric Domain ◽  
Domain Wall Memory

Nonvolatile ferroelectric domain wall memory embedded in complex topological domain structure

2022 ◽  
pp. 2107711
Author(s):  
Wenda Yang ◽  
Guo Tian ◽  
Hua Fan ◽  
Yue Zhao ◽  
Hongying Chen ◽  
...  
Keyword(s):  
Domain Wall ◽  
Domain Structure ◽  
Ferroelectric Domain ◽  
Topological Domain ◽  
Domain Wall Memory

scholarly journals Ferroelectric domain wall phonon polarizer

2017 ◽  
Vol 1 (5) ◽  
Author(s):  
Miquel Royo ◽  
Carlos Escorihuela-Sayalero ◽  
Jorge Íñiguez ◽  
Riccardo Rurali
Keyword(s):  
Domain Wall ◽  
Ferroelectric Domain

Account for Mutual Influence of Electrical, Elastic, and Thermal Phenomena for Ferroelectric Domain Wall Modeling

2013 ◽  
Vol 442 (1) ◽  
pp. 10-17 ◽  
Author(s):  
A. S. Starkov ◽  
O. V. Pakhomov ◽  
I. A. Starkov
Keyword(s):  
Domain Wall ◽  
Mutual Influence ◽  
Ferroelectric Domain ◽  
Thermal Phenomena
Sign in / Sign up

Export Citation Format

Share Document