scholarly journals Nonvolatile ferroelectric domain wall memory integrated on silicon

2021 ◽  
Author(s):  
Yuefeng Nie ◽  
Haoying Sun ◽  
Jierong Wang ◽  
Yushu Wang ◽  
Jiahui Gu ◽  
...  
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
Strain Relaxation ◽  
Perovskite Oxides ◽  
Ferroelectric Domain ◽  
Collective Effects ◽  
Promising Candidate ◽  
Nonvolatile Memories ◽  
Low Energy Consumption ◽  
Domain Wall Memory

Abstract Ferroelectric domain wall memories have been proposed as a promising candidate for nonvolatile memories, given their intriguing advantages including low energy consumption and high-density integration. Perovskite oxides possess superior ferroelectric prosperities but perovskite-based domain wall memory integrated on silicon has rarely been reported due to the technical challenges in the sample preparation. Here, we demonstrate a domain wall memory prototype utilizing freestanding BaTiO3 membranes transferred onto silicon. While as-grown BTO films on (001) SrTiO3 substrate are purely c-axis polarized, we find they exhibit distinct in-plane multidomain structures after released from the substrate and integrated onto silicon due to the collective effects from depolarizing field and strain relaxation. Based on the strong in-plane ferroelectricity, conductive domain walls with reading currents reaching 2 nA are observed and can be created artificially, highlighting the great potential of the integration of perovskite oxides with silicon for ferroelectric domain wall memories.

Ferroelectric domain-wall logic units

2021 ◽  
Author(s):  
Jing Wang ◽  
Jing Ma ◽  
Houbing Huang ◽  
Ji Ma ◽  
Hasnain Jafri ◽  
...  
Keyword(s):  
Domain Wall ◽  
Electric Field ◽  
Domain Walls ◽  
Logic Gates ◽  
Piezoresponse Force Microscopy ◽  
Ferroelectric Domain ◽  
Conduction Path ◽  
Conductive Atomic Force Microscopy ◽  
Flexible Control ◽  
Force Microscopy

Abstract The electronic conductivities of ferroelectric domain walls have been extensively explored over the past decade for potential nanoelectronic applications. However, the realization of logic devices based on ferroelectric domain walls requires reliable and flexible control of the domain-wall configuration and conduction path. Here, we demonstrate electric-field-controlled stable and repeatable on-and-off switching of conductive domain walls within topologically confined vertex domains naturally formed in self-assembled ferroelectric nano-islands. Using a combination of piezoresponse force microscopy, conductive atomic force microscopy, and phase-field simulations, we show that on-off switching is accomplished through reversible transformations between charged and neutral domain walls via electric-field-controlled domain-wall reconfiguration. By analogy to logic processing, we propose programmable logic gates (such as NOT, OR, AND and their derivatives) and logic circuits (such as fan-out) based on reconfigurable conductive domain walls. Our work provides a potentially viable platform for programmable all-electric logic based on a ferroelectric domain-wall network with low energy consumption.

scholarly journals Calibration of material parameters based on 180$$^\circ $$ and 90$$^\circ $$ ferroelectric domain wall properties in Ginzburg–Landau–Devonshire phase field models

2020 ◽  
Vol 90 (12) ◽  
pp. 2755-2774
Author(s):  
Moritz Flaschel ◽  
Laura De Lorenzis
Keyword(s):  
Domain Wall ◽  
Phase Field ◽  
Domain Walls ◽  
Ferroelectric Domain ◽  
Ginzburg Landau ◽  
Closed Form Solutions ◽  
Material Parameters ◽  
Phase Field Models ◽  
Mobility Parameter ◽  
The Relationship

Abstract Ferroelectric phase field models based on the Ginzburg–Landau–Devonshire theory are characterized by a large number of material parameters with problematic physical interpretation. In this study, we systematically address the relationship between these parameters and the main properties of ferroelectric domain walls. A variational approach is used to derive closed form solutions for the polarization fields at the phase transition regions as well as for the propagation velocities of the domain walls. Introducing a modified set of material parameters, which appropriately scales different contributions to the free energy, we are able to accurately calibrate these parameters based on domain wall thickness and energy of both 180$$^\circ $$ ∘ and 90$$^\circ $$ ∘ domain walls. Moreover, the mobility parameter appearing in the Ginzburg–Landau evolution equation can be accurately calibrated based on the propagation velocity of the domain walls.

Energy-Efficient Ferroelectric Domain Wall Memory with Controlled Domain Switching Dynamics

2020 ◽  
Vol 12 (40) ◽  
pp. 44998-45004
Author(s):  
Chao Wang ◽  
Jun Jiang ◽  
Xiaojie Chai ◽  
Jianwei Lian ◽  
Xiaobing Hu ◽  
...  
Keyword(s):  
Domain Wall ◽  
Energy Efficient ◽  
Domain Switching ◽  
Ferroelectric Domain ◽  
Switching Dynamics ◽  
Domain Wall Memory

Application of electron holography to ferroelectric study

1993 ◽  
Vol 51 ◽  
pp. 1092-1093
Author(s):  
X. Zhang ◽  
D. C. Joy ◽  
L. F. Allard ◽  
T. A. Nolan
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
Ferroelectric Domain ◽  
Electron Holography ◽  
Local Domain ◽  
Holographic Method ◽  
Wall Area ◽  
Weak Phase ◽  
Wall Structures ◽  
Essential Input

With the development of FE TEM, electron holography becomes a reality to materials scientists, which opens a new window for materials study. Weak phase objects, such as a thin transparent specimen or an electric or a magnetic field, which have little or no effect on the intensity of the transmitted wave, can readily be observed via holography because of the phase shift that they produce. Application of the electron holographic method has been extended to the study of ferroelectric domain wall structures. This work presents the most recent results in this area.Polarization gradients within domain walls are extremely important for the understanding of the extrinsic elastio-dielectric properties of ferroelectrics. Electron holographic studies of the local domain wall profiles provide essential input parameters for phenomenological theories of domain structure and of the macroscopic properties derived from the theories. Figure 1(a) is an electron hologram of the ferroelectric (BaTiO3) 90° domain wall area.

Luminescence and Raman Based Real Time Imaging of Ferroelectric Domain Walls

2006 ◽  
Vol 966 ◽  
Author(s):  
Volkmar Dierolf ◽  
Pavel Capek ◽  
Christian Sandmann
Keyword(s):  
Raman Spectroscopy ◽  
Domain Wall ◽  
Real Time ◽  
Electric Fields ◽  
Domain Walls ◽  
Ferroelectric Domain ◽  
Rare Earth Ions ◽  
The Other ◽  
Current Status ◽  
Sensitive Tool

ABSTRACTWe studied ferroelectric domain wall regions in lithium niobate using the photoluminescence of intentionally doped rare earth ions (such as Er3+) as well as Raman spectroscopy and present an overview of the current status of our ongoing investigations. We find that the Er emission is a sensitive tool to observe changes in local electric fields as well as reconfiguration of defect dipoles across the domain wall. The Raman spectra, on the other hand can be used to identify charges that accumulate asymmetrically across a domain wall. We further demonstrate that the imaging methods offer sufficient sensitivity to observe the changes associated with a domain in real time while it is moving.

scholarly journals Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

2017 ◽  
Vol 17 (1) ◽  
pp. 49-56 ◽  
Author(s):  
Jun Jiang ◽  
Zi Long Bai ◽  
Zhi Hui Chen ◽  
Long He ◽  
David Wei Zhang ◽  
...  
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
Ferroelectric Domain ◽  
Resistance Switching ◽  
Non Destructive

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films

2021 ◽  
Author(s):  
Meng Han Ao ◽  
Si Zheng Zheng ◽  
Qi Lan Zhong ◽  
Wen Di Zhang ◽  
Xu Hou ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Ferroelectric Domain ◽  
Domain Wall Memory

scholarly journals Nonvolatile ferroelectric domain wall memory

2017 ◽  
Vol 3 (6) ◽  
pp. e1700512 ◽  
Author(s):  
Pankaj Sharma ◽  
Qi Zhang ◽  
Daniel Sando ◽  
Chi Hou Lei ◽  
Yunya Liu ◽  
...  
Keyword(s):  
Domain Wall ◽  
Ferroelectric Domain ◽  
Domain Wall Memory

scholarly journals Domain Walls: Ferroelectric Domain Wall Injection (Adv. Mater. 2/2014)

2014 ◽  
Vol 26 (2) ◽  
pp. 348-348
Author(s):  
Jonathan R. Whyte ◽  
Raymond G. P. McQuaid ◽  
Pankaj Sharma ◽  
Carlota Canalias ◽  
James F. Scott ◽  
...  
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
Ferroelectric Domain ◽  
Wall Injection

scholarly journals Tunable Non-Volatile Memory by Conductive Ferroelectric Domain Walls in Lithium Niobate Thin Films

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 804
Author(s):  
Thomas Kämpfe ◽  
Bo Wang ◽  
Alexander Haußmann ◽  
Long-Qing Chen ◽  
Lukas M. Eng
Keyword(s):  
Thin Film ◽  
Domain Wall ◽  
Lithium Niobate ◽  
Applied Voltage ◽  
Room Temperature ◽  
Domain Walls ◽  
Ferroelectric Domain ◽  
Stable Set ◽  
Non Volatile Memory ◽  
Binary Information

Ferroelectric domain wall conductance is a rapidly growing field. Thin-film lithium niobate, as in lithium niobate on insulators (LNOI), appears to be an ideal template, which is tuned by the inclination of the domain wall. Thus, the precise tuning of domain wall inclination with the applied voltage can be used in non-volatile memories, which store more than binary information. In this study, we present the realization of this concept for non-volatile memories. We obtain remarkably stable set voltages by the ferroelectric nature of the device as well as a very large increase in the conduction, by at least five orders of magnitude at room temperature. Furthermore, the device conductance can be reproducibly tuned over at least two orders of magnitude. The observed domain wall (DW) conductance tunability by the applied voltage can be correlated with phase-field simulated DW inclination evolution upon poling. Furthermore, evidence for polaron-based conduction is given.

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