We show the insulating region of the metal-insulator transition phenomena in disordered two-dimensional electron systems contains new information about the quantum critical dynamics at low T because the insulating region and the quantum critical region are two aspects of the localized phase.
We have determined the spin polarized density of states (DOS) of 3-d amorphous Gd x Si 1-x in the quantum critical regime of a tunable Metal-Insulator Transition (MIT). Using a spin polarized BCS DOS we fit the data and extract the spin polarization P.
Quantum critical local spin dynamics near the Mott metal-insulator transition in infinite dimensions