Electrical properties of nuclear-doped indium antimonide

1999 ◽  
Vol 33 (7) ◽  
pp. 712-715 ◽  
Author(s):  
N. G. Kolin ◽  
D. I. Merkurisov ◽  
S. P. Solov’ev
Keyword(s):  
Electrical Properties ◽  
Indium Antimonide

Shape Effect on the Electrical Properties of Indium-Antimonide Quantum Dots

2021 ◽  
Vol 55 (3) ◽  
pp. 315-318
Author(s):  
V. F. Kabanov ◽  
A. I. Mikhailov ◽  
M. V. Gavrikov
Keyword(s):  
Quantum Dots ◽  
Electrical Properties ◽  
Indium Antimonide ◽  
Shape Effect

Optical and Photo-Electrical Properties of Indium Antimonide

1954 ◽  
Vol 67 (10) ◽  
pp. 761-767 ◽  
Author(s):  
D G Avery ◽  
D W Goodwin ◽  
W D Lawson ◽  
T S Moss
Keyword(s):  
Electrical Properties ◽  
Indium Antimonide

scholarly journals Electrochemically deposited nanocrystalline InSb thin films and their electrical properties

2016 ◽  
Vol 4 (6) ◽  
pp. 1345-1350 ◽  
Author(s):  
K. E. Hnida ◽  
S. Bäßler ◽  
J. Mech ◽  
K. Szaciłowski ◽  
R. P. Socha ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Band Gap ◽  
Indium Antimonide ◽  
Quantum Confinement ◽  
Pulse Electrodeposition ◽  
Electrochemically Deposited ◽  
Insb Thin Films ◽  
Moss Effect

Indium antimonide thin films were fabricated by pulse electrodeposition. Band gap widening due to quantum confinement (0.17 eV) and the Burstein–Moss effect (0.19 eV) was observed. The stoichiometric InSb films showed S coefficient values higher than those obtained by MOCVD.

Electrical Properties ofp-Type Indium Antimonide at Low Temperatures

1955 ◽  
Vol 99 (2) ◽  
pp. 400-405 ◽  
Author(s):  
H. Fritzsche ◽  
K. Lark-Horovitz
Keyword(s):  
Electrical Properties ◽  
Indium Antimonide ◽  
Low Temperatures
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