A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was
adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to
systematically investigate surface morphologies and electrical properties of SiC epitaxial layers
grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the
CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously
decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a
PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs
having a micron-gate length were fabricated using a lithography process and their current-voltage
performances were characterized.