Effect of the spin-orbit interaction of Ni2+ ions with a triplet orbital ground state on the magnetostriction of NiFe0.5Cr1.5O4 ferrite

2000 ◽  
Vol 42 (11) ◽  
pp. 2109-2112
Author(s):  
L. G. Antoshina ◽  
A. N. Goryaga ◽  
R. R. Annaev
Keyword(s):  
Ground State ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction

Absorption Spectrum of Mn2+ Ions Doped in Zinc Thallium Sulphate Hexahydrate

1989 ◽  
Vol 44 (1) ◽  
pp. 19-22
Author(s):  
J. Lakshmana Rao ◽  
M. Ramachandra Reddy ◽  
S. V. J. Lakshman
Keyword(s):  
Absorption Spectrum ◽  
Fine Structure ◽  
Optical Absorption ◽  
Liquid Nitrogen ◽  
Ground State ◽  
Optical Absorption Spectrum ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Octahedral Symmetry ◽  
Spin Orbit Interaction

Abstract The optical absorption spectrum of Mn2+ ions doped in zinc thallium sulphate hexahydrate has been studied at room and liquid nitrogen temperatures. The observed bands are assigned as transitions from the 6A1g(S) ground state to various excited quartet levels of Mn2+ ion in octahedral symmetry. The fine structure observed in the 4T2g(D) band is explained as due to spin-orbit interaction. All the observed band positions have been fitted with the parameters B, C, Dq and α .

scholarly journals Спиновые состояния электронов в двойной квантовой точке в двумерном топологическом изоляторе со спин-орбитальным взаимодействием

2019 ◽  
Vol 53 (9) ◽  
pp. 1257
Author(s):  
А.А. Суханов ◽  
В.А. Сабликов
Keyword(s):  
Ground State ◽  
Spin Structure ◽  
Orbit Interaction ◽  
Double Quantum ◽  
Spin Orbit ◽  
Two Dimensional ◽  
Spin Orbit Interaction ◽  
System A ◽  
Double Quantum Dot ◽  
Interacting Electrons

AbstractThe spectra and spin structure of the states of two interacting electrons localized in a double quantum dot in a two-dimensional topological insulator with spin-orbit interaction are investigated. It is found that, in such a system, a singlet-triplet transition in the ground state without a magnetic field can be implemented. Spin-orbit interaction leads to the splitting of polarized triplet levels and to anticrossing, when one of them crosses the singlet.

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

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