The saturation regime of Meixner polynomials and the discrete Bessel kernel

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

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Analytical Continuation within the Freundlich Adsorption Model. Comment on Edet, U.A.; Ifelebuegu, A.O. Kinetics, Isotherms, and Thermodynamic Modeling of the Adsorption of Phosphates from Model Wastewater Using Recycled Brick Waste. Processes 2020, 8, 665

Processes ◽

10.3390/pr9071251 ◽

2021 ◽

Vol 9 (7) ◽

pp. 1251

Author(s):

Michael Vigdorowitsch ◽

Alexander N. Pchelintsev ◽

Liudmila E. Tsygankova

Keyword(s):

Experimental Data ◽

Power Function ◽

Thermodynamic Modeling ◽

Mathematical Theory ◽

Surface Adsorption ◽

Analytical Continuation ◽

Adsorption Model ◽

Saturation Regime

Using experimental data for the adsorption of phosphates out of wastewater on waste recycled bricks, published independently in MDPI Processes before (2020), this message re-visits the mathematical theory of the Freundlich adsorption model. It demonstrates how experimental data are to be deeper treated to model the saturation regime and to bridge a chasm between those areas where the data fit the Freundlich power function and where a saturation of surface adsorption centers occurs.

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Hot-Wire Deposited Amorphous Silicon Thin-Film Transistors

MRS Proceedings ◽

10.1557/proc-424-31 ◽

1996 ◽

Vol 424 ◽

Cited By ~ 1

Author(s):

R. E. I. Schropp ◽

K. F. Feenstra ◽

C. H. M. Van Der Werf ◽

J. Holleman ◽

H. Meiling

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Thin Film Transistors ◽

Gate Dielectric ◽

Chemical Vapor ◽

Current Crowding ◽

Hot Wire ◽

Saturation Regime ◽

Silicon Thin Film ◽

Order Of Magnitude

AbstractWe present the first thin film transistors (TFTs) incorporating a low hydrogen content (5 - 9 at.-%) amorphous silicon (a-Si:H) layer deposited by the Hot-Wire Chemical Vapor Deposition (HWCVD) technique. This demonstrates the possibility of utilizing this material in devices. The deposition rate by Hot-Wire CVD is an order of magnitude higher than by Plasma Enhanced CVD. The switching ratio for TFTs based on HWCVD a-Si:H is better than 5 orders of magnitude. The field-effect mobility as determined from the saturation regime of the transfer characteristics is still quite poor. The interface with the gate dielectric needs further optimization. Current crowding effects, however, could be completely eliminated by a H2 plasma treatment of the HW-deposited intrinsic layer. In contrast to the PECVD reference device, the HWCVD device appears to be almost unsensitive to bias voltage stressing. This shows that HW-deposited material might be an approach to much more stable devices.

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