Background subtraction practice in X-ray reflectivity reciprocal space mapping and its influence on the structural parameters of thin films

2012 ◽  
Vol 55 (1) ◽  
pp. 96-103 ◽  
Author(s):  
A. Fouzri ◽  
F. Salah ◽  
N. Mtiraoui ◽  
B. Harzallah ◽  
M. Oumezzine
2013 ◽  
Vol 46 (5) ◽  
pp. 1372-1377 ◽  
Author(s):  
Daniel Schick ◽  
Roman Shayduk ◽  
André Bojahr ◽  
Marc Herzog ◽  
Clemens von Korff Schmising ◽  
...  

A diffractometer setup is presented, based on a laser-driven plasma X-ray source for reciprocal-space mapping with femtosecond temporal resolution. In order to map out the reciprocal space, an X-ray optic with a convergent beam is used with an X-ray area detector to detect symmetrically and asymmetrically diffracted X-ray photons simultaneously. The setup is particularly suited for measuring thin films or imperfect bulk samples with broad rocking curves. For quasi-perfect crystalline samples with insignificant in-plane Bragg peak broadening, the measured reciprocal-space maps can be corrected for the known resolution function of the diffractometer in order to achieve high-resolution rocking curves with improved data quality. In this case, the resolution of the diffractometer is not limited by the convergence of the incoming X-ray beam but is solely determined by its energy bandwidth.


2000 ◽  
Vol 655 ◽  
Author(s):  
Keisuke Saito ◽  
Masatoshi Mitsuya ◽  
Toshimasa Suzuki ◽  
Yuji Nishi ◽  
Masayuki Fujimoto ◽  
...  

AbstractEpitaxial (001)-, (116)- and pseudo (103)-oriented Sr0.35Bi2.2Ta2O9 (SBT (0.35/2.2/2.0)) films were successfully grown on (001), (110) and (111) SrTiO3 substrates, respectively. High-resolution X-ray diffraction reciprocal space mapping (HRXRD-RSM) measurements and pole figure measurements clearly indicated that the (116)-oriented SBT (0.35/2.2/2.0) film consisted of two growth domains those c-axis are separated 180° apart in in-plane and pseudo (103)-oriented SBT film consisted of three growth domains those c-axis are separated 120° apart in in-plane. Moreover, lattice parameter measurements indicated that SBT films grew in fully relaxed state.


2016 ◽  
Vol 214 (1) ◽  
pp. 1600356 ◽  
Author(s):  
S. Hu ◽  
A. Alsubaie ◽  
Y. Wang ◽  
J. H. Lee ◽  
K.-R. Kang ◽  
...  

2018 ◽  
Vol 189 (02) ◽  
pp. 187-194 ◽  
Author(s):  
Nikita V. Marchenkov ◽  
Anton G. Kulikov ◽  
Ivan I. Atknin ◽  
Arsen A. Petrenko ◽  
Alexander E. Blagov ◽  
...  

2005 ◽  
Vol 97 (10) ◽  
pp. 103904 ◽  
Author(s):  
Satoru Kaneko ◽  
Kensuke Akiyama ◽  
Yoshitada Shimizu ◽  
Hiroyasu Yuasa ◽  
Yasuo Hirabayashi ◽  
...  

1997 ◽  
Vol 71 (13) ◽  
pp. 1822-1824 ◽  
Author(s):  
M. Li ◽  
C. R. Becker ◽  
R. Gall ◽  
W. Faschinger ◽  
G. Landwehr

2000 ◽  
Vol 14 (25n27) ◽  
pp. 2646-2651
Author(s):  
F. RICCI ◽  
F. CARILLO ◽  
F. LOMBARDI ◽  
F. MILETTO GRANOZIO ◽  
U. SCOTTI DI UCCIO ◽  
...  

(110) and (103) YBa 2 Cu 3 O 7 films have been grown onto exact and vicinal (110) SrTiO 3 substrates, and on vicinal (110) MgO substrates with a SrTiO 3 buffer layer. The samples are carefully characterised by reciprocal space mapping with x-ray diffraction, in order to investigate the features of the typical double domain of (110) and (103) YBa 2 Cu 3 O 7 structure. It is demonstrated that vicinal cut substrates allow to select one film/substrate epitaxial relation. The growth properties of these thin films deposited on vicinal surfaces are discussed.


2003 ◽  
Vol 798 ◽  
Author(s):  
K. Tachibana ◽  
Y. Harada ◽  
S. Saito ◽  
S. Nunoue ◽  
H. Katsuno ◽  
...  

ABSTRACTCharacterization by reciprocal space mapping of x-ray diffraction (XRD) intensity was carried out for epitaxial layers of GaN-based laser structures on two GaN substrates: GaN substrate and GaN template on sapphire substrate. The difference between these two substrates was shown clearly. The distribution of XRD intensity of the epitaxial layers on GaN substrate was smaller than that of the epitaxial layers on GaN template on sapphire substrate. In the lasers with the epitaxial structure on GaN substrate, the light output power was as high as 200 mW under continuous-wave operation at room temperature. Excellent noise characteristics with relative intensity noise of -132 dB/Hz were also obtained at a low light output power of 3 mW without any high-frequency modulation. These results support that GaN substrates are promising for realizing GaN-based lasers with high performance.


1996 ◽  
Vol 79 (7) ◽  
pp. 3578-3584 ◽  
Author(s):  
J. A. Olsen ◽  
E. L. Hu ◽  
S. R. Lee ◽  
I. J. Fritz ◽  
A. J. Howard ◽  
...  

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