A technique for the local doping and correction of the conductivity of PbSnTe epitaxial layers via indium diffusion from superficial nanometer-thick films

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

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Low Temperature Sintering and Tunable Dielectrics Properties of Thick Films added of Li2CO3on BST

Korean Journal of Materials Research ◽

10.3740/mrsk.2006.16.12.747 ◽

2006 ◽

Vol 16 (12) ◽

pp. 747-753

Author(s):

So-Hyun Jeon ◽

In-Sung Kim ◽

Sun-Jong Jung ◽

Jae-Sung Song ◽

Jon-Do Yoon

Keyword(s):

Low Temperature ◽

Thick Films ◽

Low Temperature Sintering ◽

Tunable Dielectrics

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Fabrication of Bimorph Lead Zirconate Titanate Thick Films on Metal Substrates Via the Cold Sintering Process

SSRN Electronic Journal ◽

10.2139/ssrn.3525136 ◽

2020 ◽

Author(s):

Dixiong Wang ◽

Sinan Dursun ◽

Lisheng Gao ◽

Carl S. Morandi ◽

Clive A. Randall ◽

...

Keyword(s):

Lead Zirconate Titanate ◽

Thick Films ◽

Lead Zirconate ◽

Sintering Process ◽

Metal Substrates ◽

Zirconate Titanate

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Characteristics of Bi-2223 Thick Films on an MgO Substrate Prepared by a Coating Method.

TEION KOGAKU (Journal of Cryogenics and Superconductivity Society of Japan) ◽

10.2221/jcsj.37.479 ◽

2002 ◽

Vol 37 (9) ◽

pp. 479-484

Author(s):

Michiharu Ichikawa ◽

Hiroyuki Kado ◽

Masatoyo Shibuya ◽

Masahiro Kojima ◽

Masakazu Kawahara ◽

...

Keyword(s):

Thick Films ◽

Coating Method ◽

Mgo Substrate

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An homogeneous growth model of gallium arsenide epitaxial layers from the gas phase

Collection of Czechoslovak Chemical Communications ◽

10.1135/cccc19892933 ◽

1989 ◽

Vol 54 (11) ◽

pp. 2933-2950

Author(s):

Emerich Erdös ◽

Petr Voňka ◽

Josef Stejskal ◽

Přemysl Klíma

Keyword(s):

Experimental Data ◽

Gallium Arsenide ◽

Kinetic Study ◽

Gas Phase ◽

Growth Model ◽

Epitaxial Layers ◽

Inhomogeneous Model ◽

Homogeneous Models ◽

Active Centres

This paper represents a continuation and ending of the kinetic study of the gallium arsenide formation, where a so-called inhomogeneous model is proposed and quantitatively formulated in five variants, in which two kinds of active centres appear. This model is compared both with the experimental data and with the previous sequence of homogeneous models.

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