Structure characterization of MHEMT heterostructure elements with In0.4Ga0.6As quantum well grown by molecular beam epitaxy on GaAs substrate using reciprocal space mapping

2016 ◽  
Vol 61 (2) ◽  
pp. 299-303 ◽  
Author(s):  
A. N. Aleshin ◽  
A. S. Bugaev ◽  
M. A. Ermakova ◽  
O. A. Ruban
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Structure Characterization ◽  
Reciprocal Space Mapping

X-ray reciprocal space mapping of strain relaxation in GaAs1−xNx on GaAs [100] by molecular-beam epitaxy

2003 ◽  
Vol 94 (6) ◽  
pp. 3828-3833 ◽  
Author(s):  
W. K. Cheah ◽  
W. J. Fan ◽  
S. F. Yoon ◽  
S. Z. Wang ◽  
W. K. Loke
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray

Characterization of metamorphic InxAl1−xAs∕GaAs buffer layers using reciprocal space mapping

2007 ◽  
Vol 101 (6) ◽  
pp. 063523 ◽  
Author(s):  
D. Lee ◽  
M. S. Park ◽  
Z. Tang ◽  
H. Luo ◽  
R. Beresford ◽  
...  
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
Buffer Layers ◽  
Reciprocal Space Mapping

Strain characterization of Ge 1−x Si x and heavily B-doped Ge layers on Ge(001) by two-dimensional reciprocal space mapping

1996 ◽  
Vol 167 (3-4) ◽  
pp. 495-501 ◽  
Author(s):  
H.H. Radamson ◽  
K.B. Joelsson ◽  
W.-X. Ni ◽  
J. Birch ◽  
J.-E. Sundgren ◽  
...  
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
Two Dimensional ◽  
Reciprocal Space Mapping ◽  
Strain Characterization
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