Secondary particle emission from a ferromagnetic binary compound

2013 ◽  
Vol 116 (2) ◽  
pp. 186-196 ◽  
Author(s):  
K. F. Minnebaev ◽  
K. A. Tolpin ◽  
V. E. Yurasova
Keyword(s):  
Secondary Particle ◽  
Binary Compound ◽  
Particle Emission

Molecular secondary particle emission from molecular overlayers under 10 keV Ar+ primary ion bombardment

2001 ◽  
Vol 471 (1-3) ◽  
pp. 170-184 ◽  
Author(s):  
A. Schnieders ◽  
R. Möllers ◽  
A. Benninghoven
Keyword(s):  
Secondary Particle ◽  
Ion Bombardment ◽  
Particle Emission

Secondary particle emission from semiconductor crystals

Vacuum ◽  
2014 ◽  
Vol 100 ◽  
pp. 84-86 ◽  
Author(s):  
V.V. Khvostov ◽  
I.K. Khrustachev ◽  
K.F. Minnebaev ◽  
E.Yu. Zykova ◽  
V.E. Yurasova
Keyword(s):  
Secondary Particle ◽  
Particle Emission ◽  
Semiconductor Crystals

Observation of surface modification and secondary particle emission in HCI–surface interaction

2005 ◽  
Vol 235 (1-4) ◽  
pp. 456-459 ◽  
Author(s):  
Satoshi Takahashi ◽  
Masahide Tona ◽  
Kazuo Nagata ◽  
Nobuo Yoshiyasu ◽  
Nobuyuki Nakamura ◽  
...  
Keyword(s):  
Surface Modification ◽  
Secondary Particle ◽  
Surface Interaction ◽  
Particle Emission

Secondary particle emission from sapphire single crystal

2015 ◽  
Vol 354 ◽  
pp. 159-162 ◽  
Author(s):  
K.F. Minnebaev ◽  
V.V. Khvostov ◽  
E.Yu. Zykova ◽  
K.A. Tolpin ◽  
J.S. Colligon ◽  
...  
Keyword(s):  
Single Crystal ◽  
Secondary Particle ◽  
Particle Emission ◽  
Sapphire Single Crystal

Friedel'S law breakdown and interpretation of stacking fault images in tetrahedral semiconductors

1987 ◽  
Vol 45 ◽  
pp. 318-319
Author(s):  
Rob. W. Glaisher ◽  
A.E.C. Spargo
Keyword(s):  
Relative Phase ◽  
Point Group ◽  
Binary Compound ◽  
Stacking Fault ◽  
Fold Axis ◽  
Atom Pair ◽  
Tetrahedral Semiconductors ◽  
Group Symmetries ◽  
Thin Crystal ◽  
Phase Differences

Images of <11> oriented crystals with diamond structure (i.e. C,Si,Ge) are dominated by white spot contrast which, depending on thickness and defocus, can correspond to either atom-pair columns or tunnel sites. Olsen and Spence have demonstrated a method for identifying the correspondence which involves the assumed structure of a stacking fault and the preservation of point-group symmetries by correctly aligned and stigmated images. For an intrinsic stacking fault, a two-fold axis lies on a row of atoms (not tunnels) and the contrast (black/white) of the atoms is that of the {111} fringe containing the two-fold axis. The breakdown of Friedel's law renders this technique unsuitable for the related, but non-centrosymmetric binary compound sphalerite materials (e.g. GaAs, InP, CdTe). Under dynamical scattering conditions, Bijvoet related reflections (e.g. (111)/(111)) rapidly acquire relative phase differences deviating markedly from thin-crystal (kinematic) values, which alter the apparent location of the symmetry elements needed to identify the defect.

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