Magnetically controlled two-terminal device with negative differential resistance and N-type current-voltage characteristic

The electronic transport properties of oligo p-phenylenevinylene (OPV) molecule sandwiched with symmetrical or asymmetric tailoring graphene nanoribbons (GNRs) electrodes are investigated by nonequilibrium Green’s function in combination with density functional theory. The results show that different tailored GNRs electrodes can modulate the current–voltage characteristic of molecular devices. The rectifying behavior can be observed with respect to electrodes, and the maximum rectification ratio can reach to 14.2 in the asymmetric AC–ZZ GNRs and ZZ–AC–ZZ GNRs electrodes system. In addition, the obvious negative differential resistance can be observed in the symmetrical AC-ZZ GNRs system.

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Особенности транспорта носителей заряда в структурах n-=SUP=-+-=/SUP=--n-=SUP=-0-=/SUP=--n-=SUP=-+-=/SUP=- с гетеропереходом GaAs/AlGaAs при сверхвысоких плотностях тока

Физика и техника полупроводников ◽

10.21883/ftp.2019.06.47735.9064 ◽

2019 ◽

Vol 53 (6) ◽

pp. 816

Author(s):

С.О. Слипченко ◽

А.А. Подоскин ◽

О.С. Соболева ◽

В.С. Юферев ◽

В.С. Головин ◽

...

Keyword(s):

Negative Differential Resistance ◽

Differential Resistance ◽

Voltage Characteristic ◽

Balance Model ◽

Operating Voltage ◽

Current Voltage Characteristic ◽

A Value ◽

Current Voltage ◽

Algaas Layer ◽

Current Voltage Characteristics

AbstractThe current–voltage characteristics of n ^+-GaAs/ n ^0-GaAs/ N ^0-AlGaAs/ N ^+-AlGaAs/ n ^+-GaAs isotype heterostructures and n ^+-GaAs/ n ^0-GaAs/ n ^+-GaAs homostructures are studied. It is shown that, for a heterostructure under reverse bias providing the injection of electrons from n ^0-GaAs into N ^0-AlGaAs, the maximum operating voltage reaches a value of 48 V at a thickness of the N ^0-AlGaAs layer of 1 . 0 μm, and the current–voltage characteristic has no region of negative differential resistance. The operation of a homostructure is accompanied by a transition to the negative-differential-resistance region at a voltage of 10 V. Theoretical analysis in terms of the energy-balance model demonstrated that the reverse-biased isotype heterostructure has no negative-differential-resistance region because, in this case, the field domain does not collapse in contrast to what occurs in homostructures.

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Hysteresis and negative differential resistance of the current-voltage characteristic of a water bridge

Technical Physics ◽

10.1134/s1063784214060176 ◽

2014 ◽

Vol 59 (6) ◽

pp. 936-939

Author(s):

V. B. Oshurko ◽

A. N. Fedorov ◽

A. A. Ropyanoi ◽

M. V. Fedosov

Keyword(s):

Negative Differential Resistance ◽

Differential Resistance ◽

Voltage Characteristic ◽

Water Bridge ◽

Current Voltage Characteristic ◽

Current Voltage

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Negative Resistance Behavior of Ferroelectric Bismuth Titanate Ceramics at Low Field

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.492.234 ◽

2011 ◽

Vol 492 ◽

pp. 234-237 ◽

Cited By ~ 3

Author(s):

X.A. Mei ◽

M. Chen ◽

R. F. Liu ◽

Y.H. Sun ◽

J. Liu

Keyword(s):

Electrical Transport ◽

Bismuth Titanate ◽

Differential Resistance ◽

Negative Resistance ◽

Voltage Characteristic ◽

Current Voltage Characteristic ◽

Conventional Solid State Reaction ◽

Low Field ◽

Current Voltage ◽

Titanate Ceramics

Ferroelectric Bi4Ti3O12ceramics are fabricated by conventional solid-state reaction process. The current-voltage characteristic of Bi4Ti3O12sample exhibits a voltage-controlled negative differential resistance behavior at low field (E≤100V/mm), and an obvious PTC effect appears at around 100°C on the resistance-temperature curve. Based on conducting filament model about electrical transport, instead of Heywang-Jonker model, the experimental results of Bi4Ti3O12ceramics are suitably explained.

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