Negative Resistance Behavior of Ferroelectric Bismuth Titanate Ceramics at Low Field

2011 ◽  
Vol 492 ◽  
pp. 234-237 ◽  
Author(s):  
X.A. Mei ◽  
M. Chen ◽  
R. F. Liu ◽  
Y.H. Sun ◽  
J. Liu

Ferroelectric Bi4Ti3O12ceramics are fabricated by conventional solid-state reaction process. The current-voltage characteristic of Bi4Ti3O12sample exhibits a voltage-controlled negative differential resistance behavior at low field (E≤100V/mm), and an obvious PTC effect appears at around 100°C on the resistance-temperature curve. Based on conducting filament model about electrical transport, instead of Heywang-Jonker model, the experimental results of Bi4Ti3O12ceramics are suitably explained.

2018 ◽  
Vol 32 (29) ◽  
pp. 1850323
Author(s):  
Ting Ting Zhang ◽  
Cai Juan Xia ◽  
Bo Qun Zhang ◽  
Xiao Feng Lu ◽  
Yang Liu ◽  
...  

The electronic transport properties of oligo p-phenylenevinylene (OPV) molecule sandwiched with symmetrical or asymmetric tailoring graphene nanoribbons (GNRs) electrodes are investigated by nonequilibrium Green’s function in combination with density functional theory. The results show that different tailored GNRs electrodes can modulate the current–voltage characteristic of molecular devices. The rectifying behavior can be observed with respect to electrodes, and the maximum rectification ratio can reach to 14.2 in the asymmetric AC–ZZ GNRs and ZZ–AC–ZZ GNRs electrodes system. In addition, the obvious negative differential resistance can be observed in the symmetrical AC-ZZ GNRs system.


Author(s):  
С.О. Слипченко ◽  
А.А. Подоскин ◽  
О.С. Соболева ◽  
В.С. Юферев ◽  
В.С. Головин ◽  
...  

AbstractThe current–voltage characteristics of n ^+-GaAs/ n ^0-GaAs/ N ^0-AlGaAs/ N ^+-AlGaAs/ n ^+-GaAs isotype heterostructures and n ^+-GaAs/ n ^0-GaAs/ n ^+-GaAs homostructures are studied. It is shown that, for a heterostructure under reverse bias providing the injection of electrons from n ^0-GaAs into N ^0-AlGaAs, the maximum operating voltage reaches a value of 48 V at a thickness of the N ^0-AlGaAs layer of 1 . 0 μm, and the current–voltage characteristic has no region of negative differential resistance. The operation of a homostructure is accompanied by a transition to the negative-differential-resistance region at a voltage of 10 V. Theoretical analysis in terms of the energy-balance model demonstrated that the reverse-biased isotype heterostructure has no negative-differential-resistance region because, in this case, the field domain does not collapse in contrast to what occurs in homostructures.


Author(s):  
N. Othman ◽  
Z. A. Talib ◽  
A. Kassim ◽  
A. H. Shaari ◽  
J.Y.C. Liew

Polypyrrole conducting polymer was prepared by chemical reaction method with various concentrations of iron (III) chloride (FeCl3) as dopant. The dc conductivity was obtained from current-voltage characteristic by using parallel-plate techniques in the temperature range of 100-300K. With the involvement of chloride, Cl- in the polymeric chain, the conductivity increased as temperature and the dopant concentration increased. To describe the electrical transport process, Mott’s 1-D, 2-D and 3-D variable range hopping (VRH) models have been considered. The result gives evidence of transport mechanism based on Mott’s 3-D VRH mechanism for all various dopant concentrations studied.


Author(s):  
Alexander A. Logachev ◽  
Irina N. Poluyanova ◽  
Konstantin K. Zabello ◽  
Sergey M. Shkol'nik

2004 ◽  
Vol 30 (9) ◽  
pp. 736-738
Author(s):  
I. K. Kamilov ◽  
K. M. Aliev ◽  
Kh. O. Ibragimov ◽  
N. S. Abakarova

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