Chemical vapor deposition of isolated spherical diamond particles with embedded silicon-vacancy color centers onto the surface of synthetic opal

2014 ◽  
Vol 48 (2) ◽  
pp. 268-271 ◽  
Author(s):  
S. A. Grudinkin ◽  
N. A. Feoktistov ◽  
K. V. Bogdanov ◽  
M. A. Baranov ◽  
A. V. Baranov ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Synthetic Opal ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Diamond Particles

scholarly journals Фотолюминесценция центров окраски германий-вакансия в полученных химическим газофазным осаждением алмазных частицах

2020 ◽  
Vol 62 (5) ◽  
pp. 807
Author(s):  
С.А. Грудинкин ◽  
Н.А. Феоктистов ◽  
К.В. Богданов ◽  
А.В. Баранов ◽  
В.Г. Голубев
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Color Centers ◽  
Photoluminescence Intensity ◽  
Diamond Particles ◽  
Vapor Deposition Technique ◽  
Germanium Substrate ◽  
Hot Filament

Hot Filament Chemical Vapor Deposition technique was used to synthesize diamond particles with germanium-vacancy color centers on a germanium substrate. The formation of color centers occurred during the growth of diamond particles due to the incorporation of germanium atoms formed as a result of a crystalline germanium wafer etching with atomic hydrogen. The conditions of Chemical Vapor Deposition process which affect the photoluminescence of color centers of germanium vacancy in diamond particles, are considered. The highest photoluminescence intensity of germanium-vacancy color centers was achieved for diamond particles obtained on a substrate at a surface temperature close to the melting temperature of germanium. The photoluminescence spectra of the diamond particles also showed lines presumably associated with the optical centers which contain tungsten.

Photoluminescence of Germanium-Vacancy Color Centers in Diamond Particles Obtained by Chemical Vapor Deposition

2020 ◽  
Vol 62 (5) ◽  
pp. 919-925
Author(s):  
S. A. Grudinkin ◽  
N. A. Feoktistov ◽  
K. V. Bogdanov ◽  
A. V. Baranov ◽  
V. G. Golubev
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Color Centers ◽  
Diamond Particles

Evolution of the morphology of diamond particles and mechanism of their growth during the synthesis by chemical vapor deposition

2015 ◽  
Vol 57 (11) ◽  
pp. 2184-2190 ◽  
Author(s):  
N. A. Feoktistov ◽  
S. A. Grudinkin ◽  
V. G. Golubev ◽  
M. A. Baranov ◽  
K. V. Bogdanov ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Particles

scholarly journals Growth of diamond by rf plasma-assisted chemical vapor deposition

1988 ◽  
Vol 3 (6) ◽  
pp. 1397-1403 ◽  
Author(s):  
Duane E. Meyer ◽  
Natale J. Ianno ◽  
John A. Woollam ◽  
A. B. Swartzlander ◽  
A. J. Nelson
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Input Power ◽  
Rf Plasma ◽  
Diamond Particles ◽  
Scanning Electron

A system has been designed and constructed to produce diamond particles by inductively coupled radio-frequency, plasma-assisted chemical vapor deposition. This is a low-pressure, low-temperature process used in an attempt to deposit diamond on substrates of glass, quartz, silicon, nickel, and boron nitride. Several deposition parameters have been varied including substrate temperature, gas concentration, gas pressure, total gas flow rate, rf input power, and deposition time. Analytical methods employed to determine composition and structure of the deposits include scanning electron microscopy, absorption spectroscopy, scanning Auger microprobe spectroscopy, and Raman spectroscopy. Analysis indicates that particles having a thin graphite surface, as well as diamond particles with no surface coatings, have been deposited. Deposits on quartz have exhibited optical bandgaps as high as 4 5 eV. Scanning electron microscopy analysis shows that particles are deposited on a pedestal which Auger spectroscopy indicates to be graphite. This is a phenomenon that has not been previously reported in the literature.

scholarly journals Synthesis of strong SiV photoluminescent diamond particles on silica optical fiber by chemical vapor deposition

2018 ◽  
Vol 27 (3) ◽  
pp. 038101 ◽  
Author(s):  
Zongchun Yang ◽  
Yingshuang Mei ◽  
Chengke Chen ◽  
Yinlan Ruan ◽  
Xiaojun Hu
Keyword(s):  
Chemical Vapor Deposition ◽  
Optical Fiber ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Particles ◽  
Silica Optical Fiber

Effect of hydrogenated amorphous carbon films on nucleation of diamond particles by hot-filament chemical vapor deposition

1995 ◽  
Vol 10 (2) ◽  
pp. 431-435 ◽  
Author(s):  
Kazunori Tamaki ◽  
Yoshikazu Nakamura ◽  
Yoshihisa Watanabe ◽  
Shigekazu Hirayama
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bonding State ◽  
Diamond Particles ◽  
Intermediate Layers ◽  
Hot Filament ◽  
Hydrogenated Amorphous

To enhance a nucleation rate of diamond particles, hydrogenated amorphous carbon (a-C: H) intermediate layers have been formed by radio frequency plasma chemical vapor deposition (CVD) on silicon substrates prior to diamond deposition by hot filament CVD, and the effect of a-C: H intermediate layers on the nucleation and growth rate of diamond particles is studied by varying the thickness of a-C: H films. It is found that diamond particles are well synthesized on thin a-C: H intermediate layers and the nucleation density and growth rate are decreased with increasing the thickness of a-C: H films. Atomic force microscope observations show that a-C: H intermediate layers with rough surface are more effective than the smooth surface for diamond synthesis. Raman spectroscopy shows that the bonding state of carbon atoms in a-C: H films does not change by varying the thickness of a-C: H films. It is proposed that diamond nucleation is affected by the surface morphology rather than the bonding state of carbon atoms in a-C: H films.

Morphology of twinned diamond particles

1995 ◽  
Vol 10 (12) ◽  
pp. 3037-3040 ◽  
Author(s):  
Long Wang ◽  
John C. Angus ◽  
David Aue
Keyword(s):  
Atomic Force Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Force Microscopy ◽  
Angle Measurements ◽  
Atomic Force ◽  
Surface Normal ◽  
Normal Algorithm ◽  
Diamond Particles

Morphology of twinned diamond particles grown by chemical vapor deposition was characterized by atomic force microscopy in both contact and tapping modes. Quantitative angle measurements using a surface normal algorithm were performed on untwinned crystals, penetration twins, re-entrant corners, and fivefold dimples. Tip-sample interaction is discussed. The morphology of the penetration twins and some of the re-entrant corners can be explained by low order Σ3 twins and flat crystallographic surfaces. Abnormally shallow re-entrants with large vicinal faces are attributed to rapid nucleation of new layers at a point along the re-entrant intersection.

Selective nucleation and growth of diamond particles by plasma‐assisted chemical vapor deposition

1989 ◽  
Vol 55 (11) ◽  
pp. 1071-1073 ◽  
Author(s):  
Jing Sheng Ma ◽  
Hiroshi Kawarada ◽  
Takao Yonehara ◽  
Jun‐Ichi Suzuki ◽  
Jin Wei ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Diamond Particles
Sign in / Sign up

Export Citation Format

Share Document