Evolution of the morphology of diamond particles and mechanism of their growth during the synthesis by chemical vapor deposition

2015 ◽  
Vol 57 (11) ◽  
pp. 2184-2190 ◽  
Author(s):  
N. A. Feoktistov ◽  
S. A. Grudinkin ◽  
V. G. Golubev ◽  
M. A. Baranov ◽  
K. V. Bogdanov ◽  
...  
1988 ◽  
Vol 3 (6) ◽  
pp. 1397-1403 ◽  
Author(s):  
Duane E. Meyer ◽  
Natale J. Ianno ◽  
John A. Woollam ◽  
A. B. Swartzlander ◽  
A. J. Nelson

A system has been designed and constructed to produce diamond particles by inductively coupled radio-frequency, plasma-assisted chemical vapor deposition. This is a low-pressure, low-temperature process used in an attempt to deposit diamond on substrates of glass, quartz, silicon, nickel, and boron nitride. Several deposition parameters have been varied including substrate temperature, gas concentration, gas pressure, total gas flow rate, rf input power, and deposition time. Analytical methods employed to determine composition and structure of the deposits include scanning electron microscopy, absorption spectroscopy, scanning Auger microprobe spectroscopy, and Raman spectroscopy. Analysis indicates that particles having a thin graphite surface, as well as diamond particles with no surface coatings, have been deposited. Deposits on quartz have exhibited optical bandgaps as high as 4 5 eV. Scanning electron microscopy analysis shows that particles are deposited on a pedestal which Auger spectroscopy indicates to be graphite. This is a phenomenon that has not been previously reported in the literature.


2018 ◽  
Vol 27 (3) ◽  
pp. 038101 ◽  
Author(s):  
Zongchun Yang ◽  
Yingshuang Mei ◽  
Chengke Chen ◽  
Yinlan Ruan ◽  
Xiaojun Hu

1995 ◽  
Vol 10 (2) ◽  
pp. 431-435 ◽  
Author(s):  
Kazunori Tamaki ◽  
Yoshikazu Nakamura ◽  
Yoshihisa Watanabe ◽  
Shigekazu Hirayama

To enhance a nucleation rate of diamond particles, hydrogenated amorphous carbon (a-C: H) intermediate layers have been formed by radio frequency plasma chemical vapor deposition (CVD) on silicon substrates prior to diamond deposition by hot filament CVD, and the effect of a-C: H intermediate layers on the nucleation and growth rate of diamond particles is studied by varying the thickness of a-C: H films. It is found that diamond particles are well synthesized on thin a-C: H intermediate layers and the nucleation density and growth rate are decreased with increasing the thickness of a-C: H films. Atomic force microscope observations show that a-C: H intermediate layers with rough surface are more effective than the smooth surface for diamond synthesis. Raman spectroscopy shows that the bonding state of carbon atoms in a-C: H films does not change by varying the thickness of a-C: H films. It is proposed that diamond nucleation is affected by the surface morphology rather than the bonding state of carbon atoms in a-C: H films.


1995 ◽  
Vol 10 (12) ◽  
pp. 3037-3040 ◽  
Author(s):  
Long Wang ◽  
John C. Angus ◽  
David Aue

Morphology of twinned diamond particles grown by chemical vapor deposition was characterized by atomic force microscopy in both contact and tapping modes. Quantitative angle measurements using a surface normal algorithm were performed on untwinned crystals, penetration twins, re-entrant corners, and fivefold dimples. Tip-sample interaction is discussed. The morphology of the penetration twins and some of the re-entrant corners can be explained by low order Σ3 twins and flat crystallographic surfaces. Abnormally shallow re-entrants with large vicinal faces are attributed to rapid nucleation of new layers at a point along the re-entrant intersection.


1989 ◽  
Vol 55 (11) ◽  
pp. 1071-1073 ◽  
Author(s):  
Jing Sheng Ma ◽  
Hiroshi Kawarada ◽  
Takao Yonehara ◽  
Jun‐Ichi Suzuki ◽  
Jin Wei ◽  
...  

2014 ◽  
Vol 48 (2) ◽  
pp. 268-271 ◽  
Author(s):  
S. A. Grudinkin ◽  
N. A. Feoktistov ◽  
K. V. Bogdanov ◽  
M. A. Baranov ◽  
A. V. Baranov ◽  
...  

1998 ◽  
Vol 555 ◽  
Author(s):  
Toshiki Tsubota ◽  
Shigenori Tsuruga ◽  
Takeyasu Saito ◽  
Katsuki Kusakabe ◽  
Shigeharu Morooka ◽  
...  

AbstractDiamond films were grown heteroepitaxially on iridium (100) substrates by microwave plasma-assisted chemical vapor deposition (MPCVD) using methane gas as the carbon source. The iridium substrate, which was formed on a MgO (100) substrate by means of sputtering at 850 °C, was treated by imposing a negative bias between -150 and -200 V for 15 min. Methane concentration and substrate temperature were maintained at 3° and 650–740 °c, respectively. At a substrate temperature of 740 °C, diamond particles were formed at a population density of (0.15- 1.5)x108 cm-2, and most of them were oriented to MgO (100). After a further reaction for 1 h under conditions which were optimized for diamond growth, the oriented diamond particles were coalesced, and islands of (100) diamond were formed.


2006 ◽  
Vol 956 ◽  
Author(s):  
Takayuki Hirai ◽  
Yoshinori Kanno ◽  
Yoshiki Takagi

ABSTRACTDue to its extreme hardness, chemical and mechanical stability, large band gap and highest thermal conductivity, poly-crystalline diamond is expected to be an excellent packaging material for biomedical and environmental MEMS devices. Recently nano crystalline diamond (NCD) has been synthesized by microwave plasma chemical vapor deposition (MPCVD) technique using a gas mixture of methane-hydrogen or methane-hydrogen and inert gas, argon mixture. Diamond synthesis from liquid carbon source has a relatively high growth rate among various CVD methods. Hot filament chemical vapor deposition (HFCVD) is popular method in order to grow the diamond particles or films. The equipment of HFCVD in present paper is simple and the easy operating. Therefore we tried to NCD synthesis by HFCVD from liquid carbon source such as methanol, ethanol etc. The structure, surface morphology, and grain size of the diamond were examined with field emission scanning electron microscopy (FE-SEM) and Raman spectroscopy. We confirmed our diamond particles as NCD with typical Raman peak of NCD. And we observed 100nm under in diameter with FE-SEM. We will refer to NCD films synthesis by HFCVD in the paper.


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