Growth of cubic boron nitride on diamond particles by microwave plasma enhanced chemical vapor deposition

1991 ◽  
Vol 58 (22) ◽  
pp. 2482-2484 ◽  
Author(s):  
H. Saitoh ◽  
W. A. Yarbrough
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Diamond Particles

Routes to Diamond Heteroepiitaxy

1991 ◽  
Vol 250 ◽  
Author(s):  
Andrzej Badzian ◽  
Teresa Badzian
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical Vapor Deposition ◽  
Nickel Hydride ◽  
The Status

AbstractThis paper reviews the status of diamond heteroepitaxy approached by chemical vapor deposition and by physical methods. Reported are experiments with cubic boron nitride and nickel conducted with the help of microwave plasma chemical vapor deposition. X-ray diffraction data confirm diamond heteroepitaxy on the (111) faces of cubic boron nitride crystals. Heteroepitaxy on nickel was not demonstrated yet nevertheless suppression of graphite nucleation was achieved by formation of nickel hydride.

Twin structures of rhombohedral and cubic boron nitride prepared by chemical vapor deposition method

2003 ◽  
Vol 12 (3-7) ◽  
pp. 1138-1145 ◽  
Author(s):  
Takeo Oku ◽  
Kenji Hiraga ◽  
Toshitsugu Matsuda ◽  
Toshio Hirai ◽  
Makoto Hirabayashi
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method

Photochemical depassivation of hydrogenated (100) nitrogen surface of cubic boron nitride

1997 ◽  
Vol 12 (7) ◽  
pp. 1675-1677 ◽  
Author(s):  
Shojiro Komatsu
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Molecular Orbital ◽  
Vapor Deposition ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Molecular Orbital Calculations ◽  
Lowest Unoccupied Molecular Orbital

The passivation of the nitrogen top-layered (100) surface of cBN by hydrogen was theoretically predicted recently to be related to the difficulty of chemical vapor deposition of cubic boron nitride. The possibility of photochemical depassivation of this surface was suggested by the anti-bonding nature of the surface H–N bonds at the lowest unoccupied molecular orbital; that was demonstrated by AM1 molecular orbital calculations using large cBN clusters such as B30N32H64(2+) and B30N32H62 (2BH3).

In Situ S-Doping of Cubic Boron Nitride Thin Films by Plasma Enhanced Chemical Vapor Deposition

2010 ◽  
Vol 638-642 ◽  
pp. 2956-2961 ◽  
Author(s):  
Hang Sheng Yang ◽  
Norihiko Kurebayashi ◽  
Toyonobu Yoshida
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Cubic Phase ◽  
Film Adhesion ◽  
Boron Source ◽  
P Type

In situ sulphur doping of cubic boron nitride (cBN) films was investigated by adding H2S into a plasma-enhanced chemical vapor deposition system. It was found that the nucleation of cBN was suppressed severely with a very low H2S concentration, while cBN could be grown continuously even at a H2S concentration as high as that of the boron source after its nucleation. Accordingly, S was incorporated into cBN films meanwhile keeping the cubic phase concentration as high as 95%. And a rectification ratio of approximately 10 5 was observed at room temperature for heterojunction diodes prepared by depositing S-doped cBN films on p-type silicon substrates, which suggests the possibility of an n-type-like doping. Moreover, 1500K post annealing of cBN films in H2 atmosphere was found to be able to release the residual compressive stress evidently. Thus, film adhesion strength increased markedly, and cBN films reached a thickness over 200 nm without peeling off from silicon and quartz substrates in air after 9 months.

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