Selective nucleation and growth of diamond particles by plasma‐assisted chemical vapor deposition

Diamond nucleation on iridium (001) substrates was investigated under different bias conditions. High-density epitaxial nucleation can be obtained in a narrow bias window. This paper reports both the typical nucleation...

Download Full-text

Fundamental aspects of film nucleation and growth in chemical vapor deposition

Surface and Coatings Technology ◽

10.1016/0257-8972(92)90164-6 ◽

1992 ◽

Vol 54-55 ◽

pp. 211-218

Author(s):

W Tiller

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Nucleation And Growth ◽

Film Nucleation

Download Full-text

Evolution of the morphology of diamond particles and mechanism of their growth during the synthesis by chemical vapor deposition

Physics of the Solid State ◽

10.1134/s1063783415110104 ◽

2015 ◽

Vol 57 (11) ◽

pp. 2184-2190 ◽

Cited By ~ 4

Author(s):

N. A. Feoktistov ◽

S. A. Grudinkin ◽

V. G. Golubev ◽

M. A. Baranov ◽

K. V. Bogdanov ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Diamond Particles

Download Full-text

Nucleation and growth of HfO2 layers on graphene by chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.4828660 ◽

2013 ◽

Vol 103 (18) ◽

pp. 183116 ◽

Cited By ~ 12

Author(s):

Grzegorz Lupina ◽

Mindaugas Lukosius ◽

Julia Kitzmann ◽

Jarek Dabrowski ◽

Andre Wolff ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Nucleation And Growth

Download Full-text

Modeling of Silicon Nanodots Nucleation and Growth Deposited by LPCVD on SiO2 : From Molecule/surface Interactions to Reactor Scale Simulations

MRS Proceedings ◽

10.1557/proc-0959-m17-12 ◽

2006 ◽

Vol 959 ◽

Author(s):

Ilyes Zahi ◽

Hugues Vergnes ◽

Brigitte Caussat ◽

Alain Esteve ◽

Mehdi Djafari Rouhani ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Deposition Time ◽

Chemical Vapor ◽

Surface Interactions ◽

Nucleation And Growth ◽

High Dilution ◽

First Results ◽

Pressure Chemical ◽

Molecule Surface

ABSTRACTWe present first results combining models at continuum and atomistic (DFT) levels to improve understanding of key mechanisms involved in silicon nanodots (NDs) synthesis on SiO2 by Low Pressure Chemical Vapor Deposition (LPCVD) from silane SiH4. In particular, by simulating an industrial LPCVD reactor using the CFD code Fluent, we find that the deposition time could be increased and then the reproducibility and uniformity of NDs deposition could be improved when highly diluting silane in a carrier gas. A consequence of this high dilution seems to be that the contribution to deposition of unsaturated species such as silylene SiH2 highly increases. This result is important since our first DFT calculations have shown that silicon chemisorption on silanol Si-OH or siloxane Si-O-Si bonds present on SiO2 substrates could only proceed from silylene (and probably from other unsaturated species). The silane saturated molecule could only contribute to NDs growth, i.e. silicon chemisorption on already deposited silicon bonds. Increasing silylene contribution to deposition in highly diluting silane could then also exalt silicon nucleation on SiO2 substrates and then increase NDs density.

Download Full-text

Growth of diamond by rf plasma-assisted chemical vapor deposition

Journal of Materials Research ◽

10.1557/jmr.1988.1397 ◽

1988 ◽

Vol 3 (6) ◽

pp. 1397-1403 ◽

Cited By ~ 19

Author(s):

Duane E. Meyer ◽

Natale J. Ianno ◽

John A. Woollam ◽

A. B. Swartzlander ◽

A. J. Nelson

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Gas Flow ◽

Chemical Vapor ◽

Input Power ◽

Rf Plasma ◽

Diamond Particles ◽

Scanning Electron

A system has been designed and constructed to produce diamond particles by inductively coupled radio-frequency, plasma-assisted chemical vapor deposition. This is a low-pressure, low-temperature process used in an attempt to deposit diamond on substrates of glass, quartz, silicon, nickel, and boron nitride. Several deposition parameters have been varied including substrate temperature, gas concentration, gas pressure, total gas flow rate, rf input power, and deposition time. Analytical methods employed to determine composition and structure of the deposits include scanning electron microscopy, absorption spectroscopy, scanning Auger microprobe spectroscopy, and Raman spectroscopy. Analysis indicates that particles having a thin graphite surface, as well as diamond particles with no surface coatings, have been deposited. Deposits on quartz have exhibited optical bandgaps as high as 4 5 eV. Scanning electron microscopy analysis shows that particles are deposited on a pedestal which Auger spectroscopy indicates to be graphite. This is a phenomenon that has not been previously reported in the literature.

Download Full-text

Nucleation and Growth of Quasicrystalline Silicon Thin Films on Glass Substrate Synthesized by Ceramics Hot Wire Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-0910-a08-09 ◽

2006 ◽

Vol 910 ◽

Author(s):

Abdul Rafik Middya ◽

Jian-Jun Liang ◽

Kartik Ghosh

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Glass Substrate ◽

Chemical Vapor ◽

Nucleation And Growth ◽

Hot Wire ◽

Silicon Thin Films ◽

Novel Structure ◽

Hot Filament

AbstractIn this work, we report on nucleation and growth of silicon thin films on glass substrate with “five-fold” symmetry and “six-fold” symmetry by ceramics hot wire chemical vapor deposition. We observed “confinement of heat and photon” is a powerful approach in developing silicon thin films with novel structure, i.e. quasicrystalline silicon thin films on glass substrate. We found unambiguously that photons emitted from the hot filament influence the nucleation of nanocrystal silicon that produces new type of silicon thin films with “five-fold” symmetry and “six-fold” symmetry.

Download Full-text

A Study of Nucleation and Growth in MOCVD: The Growth of Thin Films of Alumina

MRS Proceedings ◽

10.1557/proc-648-p6.47 ◽

2000 ◽

Vol 648 ◽

Cited By ~ 2

Author(s):

M.P. Singh ◽

S. Mukhopadhayay ◽

Anjana Devi ◽

S.A. Shivashankar

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Secondary Ion Mass Spectrometry ◽

Film Growth ◽

Depth Profiling ◽

Chemical Vapor ◽

Nucleation And Growth ◽

Cross Sectional ◽

Alumina Films ◽

Pressure Chemical

AbstractWe have studied the nucleation and growth of alumina by metalorganic chemical vapor deposition (MOCVD). The deposition of alumina films was carried out on Si(100) in a horizontal, hot-wall, low pressure chemical vapor deposition (CVD) reactor, using aluminum acetylacetonate{Al(acac)3}as the CVD precursor. We have investigated growth of alumina films as a function of different CVD parameters such as substrate temperature and total reactor pressure during film growth. Films were characterized by optical microscopy, X-ray diffractometry (XRD), scanning electron microscopy (SEM), cross-sectional SEM, and secondary ion mass spectrometry (SIMS) compositional depth profiling. The chemical analysis reveals that the carbon is present throughout the depth of the films.

Download Full-text