Determining the Free Carrier Density in Cd x Hg1–xTe Solid Solutions from Far-Infrared Reflection Spectra

2017 ◽  
Vol 51 (13) ◽  
pp. 1732-1736
Author(s):  
A. G. Belov ◽  
I. A. Denisov ◽  
V. E. Kanevskii ◽  
N. V. Pashkova ◽  
A. P. Lysenko
Keyword(s):  
Solid Solutions ◽  
Carrier Density ◽  
Far Infrared ◽  
Free Carrier ◽  
Reflection Spectra ◽  
Free Carrier Density ◽  
Infrared Reflection

Mechanism of the Charge Transport in Intercalated Compounds Application of Optical and Potential Electrochemical Spectroscopies

1990 ◽  
Vol 210 ◽  
Author(s):  
C. Julien
Keyword(s):  
Charge Transfer ◽  
Charge Transport ◽  
Carrier Density ◽  
Far Infrared ◽  
Free Carrier ◽  
Layered Compounds ◽  
Intercalated Compounds ◽  
Free Carrier Density ◽  
Selection Of ◽  
Good Agreement

AbstractLayered compounds are known to be among the best host structures to practice lithium intercalation chemistry. Besides geometrical aspects which play an important role but are now quite well understood, this paper emphasizes the mechanism of the charge transfer upon intercalation. Electrochemical and optical spectroscopies associated to transport measurements are used for the investigations of the electronic modifications involved in the charge transfer in lithium intercalated compounds. A selection of appropriate materials is discussed. Optical spectroscopies such as photoluminescence, Raman scattering and far-infrared reflectivity show that free-carrier density and electron mobility change drastically. A good agreement is obtained with the data measurements carried out by transport experiments.

Magnetic Coupling in La0.7Ca0.3MnO3/YBa2Cu3O7/La0.7Ca0.3MnO3 Trilayers

2009 ◽  
Vol 289-292 ◽  
pp. 303-309
Author(s):  
N.M. Nemes ◽  
C. Visani ◽  
J. Garcia-Barriocanal ◽  
F.Y. Bruno ◽  
Z. Sefrioui ◽  
...  
Keyword(s):  
Magnetic Field ◽  
High Temperature ◽  
Carrier Density ◽  
High Temperature Superconductor ◽  
Hysteresis Loops ◽  
Magnetic Coupling ◽  
Oxygen Depletion ◽  
Free Carrier ◽  
Half Metallic ◽  
Free Carrier Density

We report on the interplay between ferromagnetism and superconductivity in trilayers La0.7Ca0.3MnO3/YBa2Cu3O7/La0.7Ca0.3MnO3 made of half metallic manganite and high temperature superconductor cuprate. Samples with a fully oxygenated cuprate show a magnetic field interval where the magnetizations of the manganite are aligned antiparallel. A considerable magnetoresistance accompanies the switching between magnetization configurations (parallel vs. antiparallel) of the manganite moments. Suppression of the free carrier density of the cuprate which occurs upon oxygen depletion, results in deep modifications in the shape of the normal state hysteresis loops indicating that there may be a magnetic coupling mediated by free carrier density of the cuprate. This result outlines the importance of quasiparticle transmission in the interplay between ferromagnetism and superconductivity in this kind of samples.

Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios

2010 ◽  
Vol 645-648 ◽  
pp. 255-258 ◽  
Author(s):  
Nicolò Piluso ◽  
Andrea Severino ◽  
Massimo Camarda ◽  
Ruggero Anzalone ◽  
Andrea Canino ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Density ◽  
Gas Flow ◽  
Strong Relationship ◽  
Free Carrier ◽  
Silicon Substrates ◽  
Accurate Analysis ◽  
Si Substrates ◽  
Free Carrier Density ◽  
Longitudinal Optic Phonon

Raman microscopy has been used to study transport properties in hetero-epitaxial 3C-SiC/Si thin films. By an accurate analysis of the Longitudinal Optic phonon-plasmon coupled (LOPC) modes in n-type doped 3C-SiC films, free carrier density and mobility has been determined. A study of doped 3C-SiC reveals a strong relationship between the calculated free carrier density and both the C/Si ratio used during the epitaxial process and Silicon substrates orientation on which 3C-SiC thin films were grown (maintaining the N2 gas flow rate). The free carrier density obtained is in the range between 5x1016 cm-3 and 4x1018 cm-3. Epitaxial films grown on (111) Si substrates show a higher free carrier density and a lower dependence on C/Si ratios as compared to films grown on (100) Si substrates.

Thermographic imaging of free carrier density in silicon for solar cells

2004 ◽  
Vol 1 (1) ◽  
pp. 89-98
Author(s):  
Martin C. Schubert ◽  
Jörg Isenberg ◽  
Stephan Riepe ◽  
Wilhelm Warta
Keyword(s):  
Solar Cells ◽  
Carrier Density ◽  
Free Carrier ◽  
Free Carrier Density ◽  
Thermographic Imaging
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