Effect of Annealing on the Surface Morphology and Current–Voltage Characterization of a CZO Structure Prepared by RF Magnetron Sputtering

2021 ◽  
Vol 55 (1) ◽  
pp. 28-36
Author(s):  
B. Kınacı ◽  
E. Çelik ◽  
E. Çokduygulular ◽  
Ç. Çetinkaya ◽  
Y. Yalçın ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Current Voltage

Growth and characterization of device quality ZnO on Si(111) and c-sapphire using a conventional rf magnetron sputtering

2006 ◽  
Vol 17 (2-4) ◽  
pp. 305-310 ◽  
Author(s):  
Byung-Teak Lee ◽  
Sang-Hun Jeong ◽  
Myong-Ho Kim ◽  
Min-Ho Kuk ◽  
Dong-Sik Bae ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering

SUPERCONDUCTING PROPERTIES OF BSCCO (2223) ULTRATHIN FILMS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1757-1760
Author(s):  
L. NAVARRETE ◽  
A. MARIÑO ◽  
H. SÁNCHEZ
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Structural Characterization ◽  
Ultrathin Films ◽  
Rf Magnetron Sputtering ◽  
Ex Situ ◽  
Thermal Treatments ◽  
Superconducting Properties

Ultrathin films of (Bi–Pb)–Sr–Ca–Cu–O (2223) were produced by ex situ RF magnetron sputtering on MgO (100) substrates. Films with different thermal treatments and thickness varying between 30 nm and 300 nm were obtained and studied systematically. A structural characterization of these samples was carried out and correlated with their electrical properties and thickness.

Growth and Characterization of BaBi2Nb2O9Thin Films Made by RF-Magnetron Sputtering

2003 ◽  
Vol 293 (1) ◽  
pp. 201-207
Author(s):  
T. Mazon ◽  
E. Joanni ◽  
J. R. A. Fernandes ◽  
M. A. Zaghete ◽  
M. Cilense ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering

Silicon Germanium Oxide (SixGeyO1-x-y) Infrared Sensitive Material for Uncooled Detectors

2010 ◽  
Vol 1245 ◽  
Author(s):  
Reza Anvari ◽  
Qi Cheng ◽  
Muhammad Lutful Hai ◽  
Truc Phan Bui ◽  
A. J. Syllaios ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Silicon Germanium ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Germanium Oxide ◽  
Temperature Coefficient Of Resistance ◽  
Sensitive Material

AbstractThis paper presents the formation and the characterization of silicon germanium oxide (SixGeyO1-x-y) infrared sensitive material for uncooled microbolometers. RF magnetron sputtering was used to simultaneously deposit Si and Ge thin films in an Ar/O2 environment at room temperature. The effects of varying Si and O composition on the thin film's electrical properties which include temperature coefficient of resistance (TCR) and resistivity were investigated. The highest achieved TCR and the corresponding resistivity at room temperature were -5.41 %/K and 3.16×103 ohm cm using Si0.039Ge0.875O0.086 for films deposited at room temperature.

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