Slow Ion Channeling in Monocrystalline Silicon

2020 ◽  
Vol 62 (12) ◽  
pp. 2293-2300
Author(s):  
A. B. Svechnikov
Keyword(s):  
Monocrystalline Silicon ◽  
Ion Channeling

Scanning ion microscopy images

1987 ◽  
Vol 45 ◽  
pp. 180-181
Author(s):  
R. Levi-Setti ◽  
J.M. Chabala ◽  
Y.L. Wang
Keyword(s):  
Metal Ion ◽  
Secondary Emission ◽  
Scanning Method ◽  
Ion Channeling ◽  
Secondary Ions ◽  
High Resolution Images ◽  
Ion Microscopy ◽  
Z Contrast ◽  
Focused Beams ◽  
Microscopy Images

Finely focused beams extracted from liquid metal ion sources (LMIS) provide a wealth of secondary signals which can be exploited to create high resolution images by the scanning method. The images of scanning ion microscopy (SIM) encompass a variety of contrast mechanisms which we classify into two broad categories: a) Emission contrast and b) Analytical contrast.Emission contrast refers to those mechanisms inherent to the emission of secondaries by solids under ion bombardment. The contrast-carrying signals consist of ion-induced secondary electrons (ISE) and secondary ions (ISI). Both signals exhibit i) topographic emission contrast due to the existence of differential geometric emission and collection effects, ii) crystallographic emission contrast, due to primary ion channeling phenomena and differential oxidation of crystalline surfaces, iii) chemical emission or Z-contrast, related to the dependence of the secondary emission yields on the Z and surface chemical state of the target.

Experimental investigation into polishing of monocrystalline silicon wafer using double-disc chemical assisted magnetorheological finishing process

2021 ◽  
pp. 095440622098384
Author(s):  
Mayank Srivastava ◽  
Pulak M Pandey
Keyword(s):  
Surface Roughness ◽  
Silicon Wafer ◽  
Flow Rate ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Slurry Flow ◽  
Magnetorheological Finishing ◽  
Finishing Process ◽  
Process Factors ◽  
Slurry Flow Rate

In the present work, a novel hybrid finishing process that combines the two preferred methods in industries, namely, chemical-mechanical polishing (CMP) and magneto-rheological finishing (MRF), has been used to polish monocrystalline silicon wafers. The experiments were carried out on an indigenously developed double-disc chemical assisted magnetorheological finishing (DDCAMRF) experimental setup. The central composite design (CCD) was used to plan the experiments in order to estimate the effect of various process factors, namely polishing speed, slurry flow rate, percentage CIP concentration, and working gap on the surface roughness ([Formula: see text]) by DDCAMRF process. The analysis of variance was carried out to determine and analyze the contribution of significant factors affecting the surface roughness of polished silicon wafer. The statistical investigation revealed that percentage CIP concentration with a contribution of 30.6% has the maximum influence on the process performance followed by working gap (21.4%), slurry flow rate (14.4%), and polishing speed (1.65%). The surface roughness of polished silicon wafers was measured by the 3 D optical profilometer. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were carried out to understand the surface morphology of polished silicon wafer. It was found that the surface roughness of silicon wafer improved with the increase in polishing speed and slurry flow rate, whereas it was deteriorated with the increase in percentage CIP concentration and working gap.

scholarly journals The Examination of Calcium ion Implanted Alumina with Energy Filtered Transmission Electron Microscopy

1997 ◽  
Vol 3 (S2) ◽  
pp. 413-414
Author(s):  
E.M. Hunt ◽  
J.M. Hampikian ◽  
N.D. Evans
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pure Aluminum ◽  
Lattice Parameter ◽  
Face Centered Cubic ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Knoop Microhardness ◽  
Aluminum Nanocrystals ◽  
Face Centered

Ion implantation can be used to alter the optical response of insulators through the formation of embedded nano-sized particles. Single crystal alumina has been implanted at ambient temperature with 50 keV Ca+ to a fluence of 5 x 1016 ions/cm2. Ion channeling, Knoop microhardness measurements, and transmission electron microscopy (TEM) indicate that the alumina surface layer was amorphized by the implant. TEM also revealed nano-sized crystals ≈7 - 8 nm in diameter as seen in Figure 1. These nanocrystals are randomly oriented, and exhibit a face-centered cubic structure (FCC) with a lattice parameter of 0.409 nm ± 0.002 nm. The similarity between this crystallography and that of pure aluminum (which is FCC with a lattice parameter of 0.404 nm) suggests that they are metallic aluminum nanocrystals with a slightly dilated lattice parameter, possibly due to the incorporation of a small amount of calcium.Energy-filtered transmission electron microscopy (EFTEM) provides an avenue by which to confirm the metallic nature of the aluminum involved in the nanocrystals.

Picosecond laser structuring of monocrystalline silicon surface

2013 ◽  
Author(s):  
Igor Guk ◽  
Galina Shandybina ◽  
Eugeny Yakovlev ◽  
Leonid Golovan
Keyword(s):  
Silicon Surface ◽  
Picosecond Laser ◽  
Monocrystalline Silicon ◽  
Laser Structuring

ION CHANNELING AND PIXE STUDIES OF S IMPLANTATION IN GaAs

1992 ◽  
Vol 02 (02) ◽  
pp. 151-159
Author(s):  
LIU SHIJIE ◽  
WANG JIANG ◽  
HU ZAOHUEI ◽  
XIA ZHONGHUONG ◽  
GAO ZHIGIANG ◽  
...  
Keyword(s):  
Room Temperature ◽  
Dislocation Loops ◽  
Good Recovery ◽  
Electrical Measurements ◽  
X Ray ◽  
Defect Complexes ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Activation Efficiency ◽  
Very High

GaAs (100) crystals were implanted with 100 keV S+ to a dose of 3×1015 cm−2 in a nonchanneling direction at room temperature, and treated with rapid thermal annealing (RTA). He+ Rutherford backscattering and particle-induced X-ray emission in channeling mode in combination with transmission electron microscopy (TEM) were used to study the damage and the lattice location of S atoms. It is revealed that the RTA at 950 °C for 10 sec has resulted in a very good recovery of crystallinity with a few residual defects in the form of dislocation loops, and a very high substitutionality (~90%). The activation efficiency and the Hall mobility of the implanted samples are found to be low after the electrical measurements. Based on these results an extended dopant diffusion effect for the residual defects and a correlation between the electrical properties and defect complexes are suggested.

Two modes of Ga diffusion into InAs self-assembled quantum dots suggested by ion channeling

2002 ◽  
Vol 13 (2-4) ◽  
pp. 1168-1171 ◽  
Author(s):  
N Matsumura ◽  
T Haga ◽  
S Muto ◽  
Y Nakata ◽  
N Yokoyama ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Channeling ◽  
Self Assembled
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