Effect of the spacer growth temperature on the electrophysical and structural properties of PHEMTs

2007 ◽  
Vol 52 (4) ◽  
pp. 440-445 ◽  
Author(s):  
G. B. Galiev ◽  
I. S. Vasil’evskiĭ ◽  
E. A. Klimov ◽  
V. G. Mokerov ◽  
A. A. Cherechukin ◽  
...  
Keyword(s):  
Structural Properties ◽  
Growth Temperature

Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application

2006 ◽  
Vol 515 (2) ◽  
pp. 786-789 ◽  
Author(s):  
L. Borkovska ◽  
O. Yefanov ◽  
O. Gudymenko ◽  
S. Johnson ◽  
V. Kladko ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Structural Properties ◽  
Growth Temperature

Electrical And Structural Properties Of LT-GaAs: Influence Of As/Ga Flux Ratio And Growth Temperature

1996 ◽  
Vol 442 ◽  
Author(s):  
M. Luysberg ◽  
H. Sohn ◽  
A. Prasad ◽  
P. Specht ◽  
H. Fujioka ◽  
...  
Keyword(s):  
Structural Properties ◽  
Point Defects ◽  
Growth Temperature ◽  
Conduction Mechanism ◽  
Growth Parameters ◽  
Flux Ratio ◽  
Growth Conditions ◽  
High Resistivity ◽  
Antisite Defects ◽  
Band Conduction

AbstracThe deposition of GaAs by MBE at low temperatures results in a material of unique properties. However, up to now the control and understanding of the electrical and structural properties are unsatisfactory. To investigate the influence of growth parameters on the formation of point defects and electrical properties, the substrate temperature and the As/Ga flux ratio were systematically varied. In a well defined parameter range the lattice expansion was found to be dominated by the formation of As antisite defects. After annealing a high resistivity is obtained independent of the growth conditions. A strong influence of the growth temperature on the band conduction mechanism is observed, whereas a variation of the As/Ga flux ratio induces only slight changes of the temperature dependence of the conductivity.

Magnetic and structural properties of MnAs thin films on GaAs(111)B: Influence of the growth temperature

2008 ◽  
Vol 92 (1) ◽  
pp. 011905 ◽  
Author(s):  
V. Garcia ◽  
M. Bibes ◽  
B. Vodungbo ◽  
M. Eddrief ◽  
D. Demaille ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Growth Temperature

Effects of Growth Temperature on Some Structural Properties of Crystalline Lamellae in Starches Extracted from Sweet Potatoes (Sunnyred andAyamurasaki)

2003 ◽  
Vol 55 (8) ◽  
pp. 350-357 ◽  
Author(s):  
Natalia K. Genkina ◽  
Takahiro Noda ◽  
Galina I. Koltisheva ◽  
Luybov A. Wasserman ◽  
Richard F Tester ◽  
...  
Keyword(s):  
Structural Properties ◽  
Growth Temperature ◽  
Sweet Potatoes

Impact of growth temperature on the structural properties of BGaN films grown by metal-organic vapor phase epitaxy using trimethylboron

2019 ◽  
Vol 58 (SC) ◽  
pp. SC1042 ◽  
Author(s):  
Kazushi Ebara ◽  
Ken Mochizuki ◽  
Yoku Inoue ◽  
Toru Aoki ◽  
Kazunobu Kojima ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

The effect of growth temperature on the luminescence and structural properties of GaN:Tm films grown by gas-source MBE

2008 ◽  
Vol 310 (18) ◽  
pp. 4069-4072 ◽  
Author(s):  
I.S. Roqan ◽  
E. Nogales ◽  
K.P. O’Donnell ◽  
C. Trager-Cowan ◽  
R.W. Martin ◽  
...  
Keyword(s):  
Structural Properties ◽  
Growth Temperature ◽  
Gas Source ◽  
Gas Source Mbe

Growth temperature dependence of structural properties of AlN films on ZnO (0001¯) substrates

2007 ◽  
Vol 90 (14) ◽  
pp. 141908 ◽  
Author(s):  
Kohei Ueno ◽  
Atsushi Kobayashi ◽  
Jitsuo Ohta ◽  
Hiroshi Fujioka
Keyword(s):  
Temperature Dependence ◽  
Structural Properties ◽  
Growth Temperature ◽  
Growth Temperature Dependence

Influence of growth temperature on GaN:Cr incorporation and structural properties in MOVPE

2009 ◽  
Vol 312 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Y.S. Cho ◽  
H. Hardtdegen ◽  
N. Kaluza ◽  
M. von der Ahe ◽  
U. Breuer ◽  
...  
Keyword(s):  
Structural Properties ◽  
Growth Temperature
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