Generation of high-voltage pulses with a subnanosecond leading edge in an open discharge. I. design and experimental data on switching characteristics

2015 ◽  
Vol 60 (10) ◽  
pp. 1464-1471 ◽  
Author(s):  
P. A. Bokhan ◽  
P. P. Gugin ◽  
D. E. Zakrevskii ◽  
M. A. Lavrukhin
Keyword(s):  
Experimental Data ◽  
High Voltage ◽  
Leading Edge ◽  
Open Discharge ◽  
Voltage Pulses ◽  
Switching Characteristics

Generation of high-voltage pulses with a subnanosecond leading edge in an open discharge. II. Switching mechanism

2015 ◽  
Vol 60 (10) ◽  
pp. 1472-1477 ◽  
Author(s):  
P. A. Bokhan ◽  
P. P. Gugin ◽  
D. E. Zakrevskii ◽  
M. A. Lavrukhin
Keyword(s):  
High Voltage ◽  
Leading Edge ◽  
Switching Mechanism ◽  
Open Discharge ◽  
Voltage Pulses

Generation of high-voltage pulses with subnanosecond front rise times in open discharge

2013 ◽  
Vol 20 (3) ◽  
pp. 033507 ◽  
Author(s):  
P. A. Bokhan ◽  
P. P. Gugin ◽  
M. A. Lavrukhin ◽  
Dm. E. Zakrevsky
Keyword(s):  
High Voltage ◽  
Open Discharge ◽  
Voltage Pulses

Switching high-voltage pulses with subnanosecond fronts by an open-discharge pulse shaper

2012 ◽  
Vol 38 (4) ◽  
pp. 383-386 ◽  
Author(s):  
P. A. Bokhan ◽  
P. P. Gugin ◽  
Dm. E. Zakrevsky ◽  
M. A. Lavrukhin
Keyword(s):  
High Voltage ◽  
Pulse Shaper ◽  
Discharge Pulse ◽  
Open Discharge ◽  
Voltage Pulses

Switching of High-Voltage Pulses in Devices Based on Open Discharge in Nitrogen and Oxygen

2020 ◽  
Vol 46 (10) ◽  
pp. 1020-1023
Author(s):  
P. A. Bokhan ◽  
P. P. Gugin ◽  
D. E. Zakrevsky ◽  
V. A. Kim ◽  
M. A. Lavrukhin
Keyword(s):  
High Voltage ◽  
Open Discharge ◽  
Voltage Pulses

scholarly journals Экспериментальное наблюдение задержанного ударно-ионизационного пробоя полупроводниковых структур без p-n-переходов

2018 ◽  
Vol 44 (4) ◽  
pp. 66
Author(s):  
В.И. Брылевский ◽  
И.А. Смирнова ◽  
Н.И. Подольская ◽  
Ю.А. Жарова ◽  
П.Б. Родин ◽  
...  
Keyword(s):  
Experimental Data ◽  
Numerical Simulations ◽  
High Voltage ◽  
Ohmic Contacts ◽  
Impact Ionization ◽  
Avalanche Breakdown ◽  
Conducting State ◽  
Semiconductor Structures ◽  
Voltage Pulses

AbstractWe have experimentally studied the dynamics of impact-ionization switching in semiconductor structures without p – n junctions when subnanosecond high-voltage pulses are applied. Silicon n ^+– n – n ^+ type structures and volume ZnSe samples with planar ohmic contacts exhibit reversible avalanche switching to the conducting state within about 200 ps, which resembles the well-known phenomenon of delayed avalanche breakdown in reverse-biased p ^+– n – n ^+ diode structures. Experimental data are compared to the results of numerical simulations.

Effect of the rise rate of nanosecond high-voltage pulses on the breakdown of air gaps

1999 ◽  
Vol 25 (9) ◽  
pp. 749-751 ◽  
Author(s):  
L. M. Vasilyak ◽  
S. P. Vetchinin ◽  
D. N. Polyakov
Keyword(s):  
High Voltage ◽  
Air Gaps ◽  
Rise Rate ◽  
Voltage Pulses
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