Экспериментальное наблюдение задержанного ударно-ионизационного пробоя полупроводниковых структур без p-n-переходов

AbstractWe have experimentally studied the dynamics of impact-ionization switching in semiconductor structures without p – n junctions when subnanosecond high-voltage pulses are applied. Silicon n ^+– n – n ^+ type structures and volume ZnSe samples with planar ohmic contacts exhibit reversible avalanche switching to the conducting state within about 200 ps, which resembles the well-known phenomenon of delayed avalanche breakdown in reverse-biased p ^+– n – n ^+ diode structures. Experimental data are compared to the results of numerical simulations.

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Experimental Observation of Delayed Impact-Ionization Avalanche Breakdown in Semiconductor Structures without p–n Junctions

Technical Physics Letters ◽

10.1134/s1063785018020177 ◽

2018 ◽

Vol 44 (2) ◽

pp. 160-163 ◽

Cited By ~ 3

Author(s):

V. I. Brylevskiy ◽

I. A. Smirnova ◽

N. I. Podolska ◽

Yu. A. Zharova ◽

P. B. Rodin ◽

...

Keyword(s):

Experimental Observation ◽

Impact Ionization ◽

Avalanche Breakdown ◽

Semiconductor Structures

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DESIGN OF HIGH VOLTAGE 4H-SiC SUPERJUNCTION SCHOTTKY RECTIFIERS

International Journal of High Speed Electronics and Systems ◽

10.1142/s012915640400296x ◽

2004 ◽

Vol 14 (03) ◽

pp. 865-871 ◽

Cited By ~ 13

Author(s):

Lin Zhu ◽

Peter Losee ◽

T. Paul Chow

Keyword(s):

Optimal Design ◽

Numerical Simulations ◽

Breakdown Voltage ◽

High Voltage ◽

Avalanche Breakdown ◽

Schottky Rectifiers ◽

Design Tradeoffs ◽

Schottky Rectifier ◽

Avalanche Breakdown Voltage

This paper presents a novel Schottky rectifier structure based on the superjunction approach, which is utilizes 2- and 3-D field shaping to increase the avalanche breakdown voltage. Device forward and blocking characteristics are analyzed with numerical simulations and compared with conventional 4 H - SiC Schottky rectifiers. Optimal design tradeoffs between breakdown voltage and specific on-resistance are obtained for high voltage 4 H - SiC superjunction Schottky rectifiers. The results show that the new structure can provide a 20 × lower R on,sp than conventional Schottky rectifier for 6kV device. In addition, device termination and possible fabrication steps for the superjunction devices are also presented.

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Reaction Time to Voltage Pulses Applied to Semiconductor Impact Ionization Breakdown

Zeitschrift für Naturforschung A ◽

10.1515/zna-1993-5-608 ◽

1993 ◽

Vol 48 (5-6) ◽

pp. 639-640

Author(s):

A. Kittel ◽

U. Rau ◽

M. Hirsch ◽

R. Richter ◽

R. P. Huebener ◽

...

Keyword(s):

Phase Transition ◽

Reaction Time ◽

Control Parameter ◽

Impact Ionization ◽

Sudden Change ◽

Avalanche Breakdown ◽

Time Resolved ◽

Conducting State ◽

Voltage Bias ◽

Time Resolved Measurements

Abstract The electric avalanche breakdown in semiconductors exhibits many features of a phase transition. In this paper, we introduce time-resolved measurements performed during the transition from a low to a high conducting state as reaction to a sudden change of the control parameter (i.e., the voltage bias).

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