Abstract The technological prospects for the creation of a system of microfocus X-ray tubes with the use of silicon field emission of nanocathodes have been discussed. A numerical analysis of the field-emission current from a nanoscale semiconductor cathode regulated by voltage on a grid electrode has been carried out on the basis of which a scheme for controlling the elements of the matrix of field-emission cathode assemblies has been proposed. The current–voltage characteristics of silicon field emission nanocathodes have been measured. They are in good agreement with the theoretical estimates of the field-emission current. A full technological cycle of the development of elements of microfocus X-ray tubes (a set of field-emission cathode assemblies and a set of anode assemblies) has been performed. The results can be used to create systems of microfocus X-ray tubes for nanolithographic equipment of a new generation.
A portable x-ray source with a nanostructured Pt-coated silicon field emission cathode for absorption imaging of low-Z materials