The temperature dependence of the resistivity of ohmic contacts based on gallium arsenide and indium phosphide in the 4.2–300 K range

2016 ◽  
Vol 42 (6) ◽  
pp. 649-651
Author(s):  
A. V. Sachenko ◽  
A. E. Belyaev ◽  
N. S. Boltovets ◽  
R. V. Konakova ◽  
S. A. Vitusevich ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Indium Phosphide ◽  
Temperature Dependence ◽  
Ohmic Contacts

Temperature dependence of Ohmic contacts of In0.83Ga0.17As photodiodes and its correlation with interface microstructure

2015 ◽  
Vol 121 (3) ◽  
pp. 1109-1114 ◽  
Author(s):  
Gaoqi Cao ◽  
Hengjing Tang ◽  
Xue Li ◽  
Ming Shi ◽  
Tao Li ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Ohmic Contacts ◽  
Interface Microstructure

Relative Analysis of GaAs, InSb, InP Using QWFET

2014 ◽  
Vol 984-985 ◽  
pp. 1080-1084 ◽  
Author(s):  
T.D. Subash ◽  
T. Gnanasekaran ◽  
J. Jagannathan ◽  
C. Divya
Keyword(s):  
Gallium Arsenide ◽  
Band Structure ◽  
Indium Phosphide ◽  
Low Power ◽  
Indium Antimonide ◽  
Electron Mobility ◽  
High Speed ◽  
Simulation Tool ◽  
Saturation Velocity ◽  
Relative Analysis

Indium Antimonide (InSb) has the greater electron mobility and saturation velocity of any semiconductor. Also InSb detectors are sensitive between 1–5 μm wavelengths and it belongs to III-V [13] component. In this paper we compare the InSb with some other major components like Indium Phosphide (InP) and Gallium Arsenide (GaAs) which are also from same III-V group. The analysis was made using the simulation tool TCAD and using the properties and band structure of those materials we compare InSb with InP and GaAs. The results we proposed shows that InSb is best for ultra high speed and very low power applications.

scholarly journals Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates

2018 ◽  
Vol 1 (2) ◽  
pp. 284-289 ◽  
Author(s):  
Ann L. Greenaway ◽  
Benjamin F. Bachman ◽  
Jason W. Boucher ◽  
Christopher J. Funch ◽  
Shaul Aloni ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Water Vapor ◽  
Indium Phosphide ◽  
Gallium Indium Phosphide ◽  
Vapor Transport

Temperature dependence of the resistance in the Pt/Ti nonalloyed ohmic contacts top‐InAs induced by rapid thermal processing

1990 ◽  
Vol 68 (8) ◽  
pp. 4141-4150 ◽  
Author(s):  
A. Katz ◽  
S. N. G. Chu ◽  
B. E. Weir ◽  
W. C. Dautremont‐Smith ◽  
R. A. Logan ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing
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