Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium

2017 ◽  
Vol 43 (9) ◽  
pp. 849-852
Author(s):  
S. P. Lebedev ◽  
I. A. Eliseyev ◽  
V. Yu. Davydov ◽  
A. N. Smirnov ◽  
V. S. Levitskii ◽  
...  
Keyword(s):  
Transport Properties ◽  
Graphene Films ◽  
Argon Medium

Significant enhancement of the electrical transport properties of graphene films by controlling the surface roughness of Cu foils before and during chemical vapor deposition

Nanoscale ◽  
2014 ◽  
Vol 6 (21) ◽  
pp. 12943-12951 ◽  
Author(s):  
Dongmok Lee ◽  
Gi Duk Kwon ◽  
Jung Ho Kim ◽  
Eric Moyen ◽  
Young Hee Lee ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Transport Properties ◽  
Sheet Resistance ◽  
Vapor Deposition ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Significant Enhancement ◽  
Electrical Transport Properties ◽  
Graphene Films

Graphene resistivity decreases as the surface roughness of the copper foils decreases. Small grain polycrystalline graphene films grown on pre-annealed and electropolished copper exhibit a sheet resistance of 210 Ω □−1.

scholarly journals Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect ofin situhydrogenation and annealing

2014 ◽  
Vol 89 (8) ◽  
Author(s):  
B. Jabakhanji ◽  
A. Michon ◽  
C. Consejo ◽  
W. Desrat ◽  
M. Portail ◽  
...  
Keyword(s):  
Transport Properties ◽  
Graphene Films

scholarly journals Tailoring the thermal and electrical transport properties of graphene films by grain size engineering

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Teng Ma ◽  
Zhibo Liu ◽  
Jinxiu Wen ◽  
Yang Gao ◽  
Xibiao Ren ◽  
...  
Keyword(s):  
Grain Size ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties ◽  
Graphene Films

Effects of methane flux on structural and transport properties of CVD-grown graphene films

Vacuum ◽  
2012 ◽  
Vol 86 (7) ◽  
pp. 895-898 ◽  
Author(s):  
Z.G. Wang ◽  
Y.F. Chen ◽  
P.J. Li ◽  
X. Hao ◽  
Y. Fu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Methane Flux ◽  
Graphene Films ◽  
Grown Graphene

Transport Properties of Multi-Graphene Films Grown on Semi-Insulating SiC

2012 ◽  
Vol 20 (4-7) ◽  
pp. 553-557 ◽  
Author(s):  
S. P. Lebedev ◽  
A. M. Strel'chuk ◽  
D. V. Shamshur ◽  
N. V. Agrinskaya ◽  
A. A. Lebedev
Keyword(s):  
Transport Properties ◽  
Graphene Films

Spectroscopic Diagnostics of Tokamaks

1988 ◽  
Vol 102 ◽  
pp. 165-174
Author(s):  
C. de Michelis
Keyword(s):  
Transport Properties ◽  
Power Losses ◽  
Spectroscopic Diagnostics ◽  
Important Concern

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

Transport properties of a class of deterministic one dimensional models with mobility edges

1993 ◽  
Vol 3 (7) ◽  
pp. 1515-1522 ◽  
Author(s):  
H. Cruz ◽  
S. Das Sarma
Keyword(s):  
Transport Properties ◽  
One Dimensional ◽  
Dimensional Models
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