scholarly journals Tailoring the thermal and electrical transport properties of graphene films by grain size engineering

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Teng Ma ◽  
Zhibo Liu ◽  
Jinxiu Wen ◽  
Yang Gao ◽  
Xibiao Ren ◽  
...  
Keyword(s):  
Grain Size ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties ◽  
Graphene Films

Effect of Sintering on Structural and Transport Properties on Nanosized Pr0.85Na0.15MnO3

2015 ◽  
Vol 1107 ◽  
pp. 272-277 ◽  
Author(s):  
Siau Wei Ng ◽  
Kean Pah Lim ◽  
S.A. Halim ◽  
Hassan Jumiah ◽  
Albert H.M. Gan ◽  
...  
Keyword(s):  
Grain Size ◽  
Transport Properties ◽  
Electrical Transport ◽  
Boundary Effect ◽  
Sol Gel ◽  
Magnetic Layer ◽  
Electrical Transport Properties ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Semiconductor Behavior

We have investigated the structural, microstructure and electrical transport properties of nanosized Pr0.85Na0.15MnO3 (PNMO) synthesized by sol-gel technique and sinter from 600°C to 1000°C. The grain size increases from 67 nm (S600) up to 284 nm (S1000) due to the grain growth during heat treatment. XRD showed that single phase orthorhombic crystal structure of PNMO is fully forms started at 600°C. The resistivity decreased with the increased of grain size and crystallite size due to the reduction of grain boundary effect (dead magnetic layer) which improved their grain conductivity.All samples showed semiconductor behavior where their metal insulator transition temperatures (TMIT) were estimated to be lower than 80K.

Significant enhancement of the electrical transport properties of graphene films by controlling the surface roughness of Cu foils before and during chemical vapor deposition

Nanoscale ◽  
2014 ◽  
Vol 6 (21) ◽  
pp. 12943-12951 ◽  
Author(s):  
Dongmok Lee ◽  
Gi Duk Kwon ◽  
Jung Ho Kim ◽  
Eric Moyen ◽  
Young Hee Lee ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Transport Properties ◽  
Sheet Resistance ◽  
Vapor Deposition ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Significant Enhancement ◽  
Electrical Transport Properties ◽  
Graphene Films

Graphene resistivity decreases as the surface roughness of the copper foils decreases. Small grain polycrystalline graphene films grown on pre-annealed and electropolished copper exhibit a sheet resistance of 210 Ω □−1.

Effect of sintering temperature and grain size on the electrical transport properties of La0.67Sr0.33MnO3 manganite

2015 ◽  
Vol 640 ◽  
pp. 77-81 ◽  
Author(s):  
H. Baaziz ◽  
N.K. Maaloul ◽  
A. Tozri ◽  
H. Rahmouni ◽  
S. Mizouri ◽  
...  
Keyword(s):  
Grain Size ◽  
Transport Properties ◽  
Electrical Transport ◽  
Sintering Temperature ◽  
Electrical Transport Properties

scholarly journals Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong
Keyword(s):  
Transport Properties ◽  
Gold Nanoparticle ◽  
Electrical Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Electrical Transport Properties ◽  
Noncovalent Functionalization ◽  
Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

scholarly journals Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang
Keyword(s):  
Phase Transition ◽  
Electrical Conductivity ◽  
High Pressure ◽  
Phase Transformation ◽  
Transport Properties ◽  
Electrical Transport ◽  
Structural Phase ◽  
Structure Evolution ◽  
Systematic Research ◽  
Electrical Transport Properties

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.

scholarly journals Order–Disorder Transition in Inorganic Clathrates Controls Electrical Transport Properties

2021 ◽  
Author(s):  
Joakim Brorsson ◽  
Yifei Zhang ◽  
Anders E. C. Palmqvist ◽  
Paul Erhart
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties ◽  
Disorder Transition ◽  
Inorganic Clathrates

Exploring the electrical transport properties of La0.67Ca0.33MnO3 at different sintering temperatures

2021 ◽  
Author(s):  
Longfei Qi ◽  
Yule Li ◽  
Ping Yu ◽  
Xiaojin Wang ◽  
Yingjuan Li ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties
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