Epitaxial gallium nitride thin films grown on silicon substrates utilizing gallium nitride seed-layer formed by liquid source precursor

2011 ◽  
Vol 29 (1) ◽  
pp. 130-133 ◽  
Author(s):  
Ky Nam Hoang ◽  
Hong Tak Kim ◽  
Woosuk Jun ◽  
Chinho Park
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Seed Layer ◽  
Silicon Substrates ◽  
Liquid Source

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

Powerful Gallium Nitride Microwave Transistors on Silicon Substrates

2020 ◽  
Vol 15 (2) ◽  
pp. 169-174
Author(s):  
Yu. V. Khrapovitskaya ◽  
M. Y. Chernykh ◽  
I. S. Ezubchenko ◽  
Yu. V. Grishchenko ◽  
I. O. Mayboroda ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Silicon Substrates ◽  
Microwave Transistors

Enhanced energy-storage performance of 0.94NBT-0.06BT thin films induced by a Pb 0.8 La 0.1 Ca 0.1 Ti 0.975 O 3 seed layer

2016 ◽  
Vol 42 (13) ◽  
pp. 14788-14792 ◽  
Author(s):  
Y.L. Zhang ◽  
W.L. Li ◽  
W.P. Cao ◽  
T.D. Zhang ◽  
T.R.G.L. Bai ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Storage ◽  
Seed Layer ◽  
Storage Performance

scholarly journals Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Indium Tin Oxide ◽  
Seed Layer ◽  
Room Temperature ◽  
Low Cost ◽  
Temperature Dependent ◽  
Temperature Heat ◽  
Electrochemically Deposited

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.

Pendeo-epitaxial growth of gallium nitride on silicon substrates

2000 ◽  
Vol 29 (3) ◽  
pp. 306-310 ◽  
Author(s):  
Thomas Gehrke ◽  
Kevin J. Linthicum ◽  
Edward Preble ◽  
Pradeep Rajagopal ◽  
Carsten Ronning ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Epitaxial Growth ◽  
Silicon Substrates

Pseudo-C11b Phase Formation of Titanium Disilicide During the C49 to C54 Transition

1997 ◽  
Vol 481 ◽  
Author(s):  
Patrick L. Smith ◽  
Richard Ortega ◽  
Bill Brennan
Keyword(s):  
Thin Films ◽  
Plane Wave ◽  
Intermediate Phase ◽  
Unit Cell ◽  
Silicon Substrates ◽  
Unit Cell Parameters ◽  
Titanium Disilicide ◽  
Cell Parameters ◽  
Chemical Signatures ◽  
Pseudo Potential

ABSTRACTThe formation of TiSi2 thin films using the SALICIDE process on doped and undoped silicon substrates was studied. XRD TEM, AES, RBS and four probe Rs were used to characterize the material. Unit cell parameters and energetics were determined. Results confirm electrical and chemical signatures consistent with the known C49 conversion to C54. However, XRD indicated a structurally different intermediate phase occurs during the C49 to C54 transformation. Modeling was performed based on C11b structure (14/mmm) type, with the Ti and Si atoms arranged similarly to those in MoSi2. The unit cell was determined to be a = 4.428 Å, b = 4.779 Å, c = 9.078 Å with a Fmmm space group and total pseudo-potential plane wave calculations based on crystallographic simulations of −103.96 ev/Atom.

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