Pendeo-epitaxial growth of gallium nitride on silicon substrates

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

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Powerful Gallium Nitride Microwave Transistors on Silicon Substrates

Nanotechnologies in Russia ◽

10.1134/s1995078020020123 ◽

2020 ◽

Vol 15 (2) ◽

pp. 169-174

Author(s):

Yu. V. Khrapovitskaya ◽

M. Y. Chernykh ◽

I. S. Ezubchenko ◽

Yu. V. Grishchenko ◽

I. O. Mayboroda ◽

...

Keyword(s):

Gallium Nitride ◽

Silicon Substrates ◽

Microwave Transistors

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Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2011.08.032 ◽

2011 ◽

Vol 334 (1) ◽

pp. 113-117 ◽

Cited By ~ 9

Author(s):

Kevin Goodman ◽

Vladimir Protasenko ◽

Jai Verma ◽

Tom Kosel ◽

Grace Xing ◽

...

Keyword(s):

Gallium Nitride ◽

Aluminum Oxide ◽

Epitaxial Growth ◽

Molecular Beam ◽

Atomic Layer ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga-HCl-NH3-H2-Ar system

Technical Physics Letters ◽

10.1134/s1063785015050314 ◽

2015 ◽

Vol 41 (5) ◽

pp. 476-478 ◽

Cited By ~ 1

Author(s):

Yu. V. Zhilyaev ◽

V. V. Zelenin ◽

T. A. Orlova ◽

V. N. Panteleev ◽

N. K. Poletaev ◽

...

Keyword(s):

Gallium Nitride ◽

Epitaxial Growth ◽

Gas Phase

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Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.299 ◽

2006 ◽

Vol 527-529 ◽

pp. 299-302

Author(s):

Hideki Shimizu ◽

Yosuke Aoyama

Keyword(s):

Substrate Temperature ◽

Single Crystal ◽

Epitaxial Growth ◽

Deposition Rate ◽

Crystalline Structure ◽

Flow Rate ◽

Silicon Substrates ◽

High Quality ◽

Sic Films ◽

Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

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Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates

Materials Science Forum ◽

10.4028/www.scientific.net/msf.483-485.209 ◽

2005 ◽

Vol 483-485 ◽

pp. 209-212

Author(s):

Hideki Shimizu ◽

Kensaku Hisada ◽

Yosuke Aoyama

Keyword(s):

Epitaxial Growth ◽

Flow Rate ◽

Hydrogen Plasma ◽

Silicon Substrates ◽

X Ray Diffraction ◽

Ellipsometric Measurement ◽

X Ray ◽

Hydrogen Radicals ◽

Sic Films ◽

Reflection Electron Diffraction

Effects of the flow rate of C3H8 passed through hydrogen plasma on deposition rates and^microstructures of 3C-SiC films on Si (100) substrate were investigated by a reflection electron diffraction, an X-ray diffraction and an ellipsometric measurement. The deposition rate of the films increased independently of the flow rate of C3H8 with increasing the flow rate of SiH4. The films grown with increasing the flow rate of C3H8 kept single crystalline structure even at high flow rate of SiH4. Hydrogen radicals generated from C3H8 decomposition by plasma increase with increasing the flow rate of C3H8, and play important rolls to keep epitaxial growth.

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Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

MRS Proceedings ◽

10.1557/proc-572-389 ◽

1999 ◽

Vol 572 ◽

Author(s):

C. M. Lueng ◽

H. L. W. Chan ◽

W. K. Fong ◽

C. Surya ◽

C. L. Choy

Keyword(s):

Thin Films ◽

Gallium Nitride ◽

High Temperature ◽

Molecular Beam Epitaxy ◽

Aluminum Nitride ◽

Composite Film ◽

High Frequency ◽

Molecular Beam ◽

Silicon Substrates ◽

Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

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