scholarly journals Trends of elemental adsorption on graphene

2016 ◽  
Vol 94 (5) ◽  
pp. 437-447 ◽  
Author(s):  
Hantarto Widjaja ◽  
Mohammednoor Altarawneh ◽  
Zhong-Tao Jiang
Keyword(s):  
Fermi Energy ◽  
Electronic Structures ◽  
Periodic Table ◽  
Energy Shift ◽  
Atomic Ratio ◽  
Electronic Energy ◽  
Migration Energy ◽  
Energy Band Gap ◽  
Complex Adsorption ◽  
Electronic Energy Band

Adding impurities or doping through adsorption is an effective way to tailor the properties of graphene-based materials. The capability of making predictions with regard to the trends of elemental adsorption on graphene is crucial to a better understanding of the more complex adsorption cases. It also provides useful guidelines for fabricating 2D graphene materials with novel properties. In this review, we show trends of elemental adsorption on graphene with elements of the periodic table, based on previous studies and supplemented with our recent calculations. We also discuss the effects of atomic ratios on some properties of this element-adsorbed graphene system. Trends of properties studied include binding energy, most stable site, adatom height, migration energy, Fermi energy shift, graphene distortion, magnetization, charge transfer, and electronic energy band gap at Fermi energy. Certainly, there is ample scope to investigate the electronic structures of elemental adsorption on graphene based on period and group of the periodic table, and atomic ratio.

Electronic Structure and Optical Properties of SrTi0.5Zr0.5O3

2013 ◽  
Vol 846-847 ◽  
pp. 1919-1922
Author(s):  
Hong Liang Pan ◽  
Teng Li ◽  
Shi Liang Yang ◽  
Yi Ming Liu
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Energy Band ◽  
Electronic Energy ◽  
Energy Band Structure ◽  
Generalized Gradient ◽  
Generalized Gradient Approximation ◽  
Structure Density ◽  
Pseudo Potential ◽  
Electronic Energy Band

The electronic-energy band structure and optical properties of SrTi0.5Zr0.5O3are calculated by the pseudo-potential plane wave (PP-PW) mehod with the generalized gradient approximation (GGA). The energy band structure, density of states (DOS) are obtained. The optical properties including the dielectric function, reflectivity, absorption spectrum, extinction coefficient, energy-loss spectrum and refractive index are also discussed.

scholarly journals Electronic Energy Band Structure of SnS2and SnSe2

1973 ◽  
Vol 7 (10) ◽  
pp. 4748-4748 ◽  
Author(s):  
C. Y. Fong ◽  
Marvin L. Cohen
Keyword(s):  
Band Structure ◽  
Energy Band ◽  
Electronic Energy ◽  
Energy Band Structure ◽  
Electronic Energy Band

Si2p Core Level Absorption and Photoemission Spectra of Porous Si

1992 ◽  
Vol 283 ◽  
Author(s):  
Hisao Nakashima ◽  
Koichi Inoue ◽  
Kenzo Maehashi
Keyword(s):  
Synchrotron Radiation ◽  
Electronic Structures ◽  
Energy Shift ◽  
Blue Shift ◽  
Photo Luminescence ◽  
High Energy ◽  
Core Level ◽  
Oxidation States ◽  
Porous Si ◽  
The Core

ABSTRACTSi2p core level absorption and photoemission spectra are taken for different porous Si layers using synchrotron radiation, toknow the electronic structures of porous Si. The core level absorption spectra show the high energy shift of the conduction band which correlates with the photo-luminescence blue shift. The oxidation states of porous Si are clarified from the photoemission spectra.

Electronic energy band in chromium, manganese, and iron monosilicides

1972 ◽  
Vol 15 (8) ◽  
pp. 1089-1093
Author(s):  
F. A. Sidorenko ◽  
E. A. Dmitriev ◽  
P. V. Gel'd
Keyword(s):  
Energy Band ◽  
Electronic Energy ◽  
Electronic Energy Band

Influence of Deposition Time on the Properties of Highly-Oriented SnS Thin Films Prepared Using the Thermal Evaporation Method

2012 ◽  
Vol 602-604 ◽  
pp. 1409-1412 ◽  
Author(s):  
Patrick. A. Nwofe ◽  
K. T. Ramakrishna Reddy ◽  
Robert W. Miles
Keyword(s):  
Crystal Structure ◽  
Single Phase ◽  
Deposition Time ◽  
Thermal Evaporation ◽  
Atomic Ratio ◽  
Energy Band Gap ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Thermal Evaporation Method ◽  
Sns Thin Films

The influence of deposition time on the properties of SnS films grown using the thermal evaporation was reported. The deposition time was varied between 0.7 – 3 min, keeping other deposition variables constant. The layers showed single phase with orthorhombic crystal structure, exhibiting a strong (040) reflection. With an increase of deposition time, the Sn/S atomic ratio and grain size and the number of crystallites in the layers increased while the dislocation density and bulk resistivity decreased. The increase of crystallinity of the layers was confirmed by the change of strain from tensile to compressive with increasing deposition time. The transmittance of the films were > 70% for deposition time ≤ 1min and decreased drastically otherwise. The energy band gap varied in the range 1.80 - 1.30 eV with the lower values obtained at longer deposition times.

Electronic energy-band structure of α quartz

1978 ◽  
Vol 18 (6) ◽  
pp. 2888-2896 ◽  
Author(s):  
Eduardo Calabrese ◽  
W. Beall Fowler
Keyword(s):  
Band Structure ◽  
Energy Band ◽  
Electronic Energy ◽  
Energy Band Structure ◽  
Electronic Energy Band
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