REFLECTANCE OF GaAs, GaP, AND THE GaAs1−x Px ALLOYS
Keyword(s):
The reflectance of GaAs, GaP, and the GaAs1−x Px alloys has been measured between 2.5 eV and 20 eV at room temperature and between 2.5 eV and 6 eV at liquid-nitrogen temperature. The transitions E1, E1 + Δ1, Ecp, E0′, E2, E1′, E1′ + Δ1′, and d1 have all been observed and their behavior as a function of alloy composition is presented. The data have been used to give a more detailed picture of the band structure of GaAs and GaP and of the way in which the band structure varies with alloying. In particular, the spin-orbit splittings of the valence band are discussed and the relevance of the 2/3 spin-orbit splitting law considered.
1967 ◽
Vol 19
(2)
◽
pp. 823-832
◽
1992 ◽
Vol 47
(7-8)
◽
pp. 813-818
◽
2018 ◽
Vol 32
(05)
◽
pp. 1850055
◽
1985 ◽
Vol 55
(9)
◽
pp. 851-855
◽
Keyword(s):
1975 ◽
Vol 17
(11)
◽
pp. 1415-1420
◽