REFLECTANCE OF GaAs, GaP, AND THE GaAs1−x Px ALLOYS

1966 ◽  
Vol 44 (11) ◽  
pp. 2927-2940 ◽  
Author(s):  
A. G. Thompson ◽  
J. C. Woolley ◽  
M. Rubenstein

The reflectance of GaAs, GaP, and the GaAs1−x Px alloys has been measured between 2.5 eV and 20 eV at room temperature and between 2.5 eV and 6 eV at liquid-nitrogen temperature. The transitions E1, E1 + Δ1, Ecp, E0′, E2, E1′, E1′ + Δ1′, and d1 have all been observed and their behavior as a function of alloy composition is presented. The data have been used to give a more detailed picture of the band structure of GaAs and GaP and of the way in which the band structure varies with alloying. In particular, the spin-orbit splittings of the valence band are discussed and the relevance of the 2/3 spin-orbit splitting law considered.

1995 ◽  
Vol 50 (12) ◽  
pp. 1165-1169
Author(s):  
A. Venkata Subbaiah ◽  
J. Lakshmana Rao ◽  
Y. Nagaraja Naidu

Abstract The optical obsorption spectrum of Co(II) ions doped in magnesium thallium sulphate hexahy­ drate is studied at room and liquid nitrogen temperatures. The crystal exhibits characteristic absorption of the Co(II) ion in the visible and near infrared. The observed bands are assigned to transitions from the ground state 4T1g (F) to various excited quartet and doublet levels of the Co(II) ion in octahedral symmetry. The splitting of one of the bands at liquid nitrogen temperature is explained to be due to spin-orbit splitting. All band positions have been fitted by the parameters B, C, Dq and ξ.


1992 ◽  
Vol 47 (7-8) ◽  
pp. 813-818 ◽  
Author(s):  
A. Venkata Subbaiah ◽  
J. Lakshmana Rao ◽  
R. Murali Krishna ◽  
S. V. J. Lakshman

Abstract The optical absorption spectrum of Ni(II) ions doped in magnesium thallium sulphate hexahydrate has been studied at room- and liquid nitrogen-temperature. The crystal shows characteristic absorption of Ni(II) ion in the visible and near infrared region. The observed bands are assigned as transitions from the ground state 3A2g(F) to various excited triplet and singlet levels of the Ni(II) ion in octahedral symmetry. The splitting in one of the bands at liquid nitrogen temperature has been explained to be due to spin-orbit splitting. All the observed band positions have been fitted with the parameters B, C, Dq, and ξ


2018 ◽  
Vol 32 (05) ◽  
pp. 1850055 ◽  
Author(s):  
Ranber Singh

The spin–orbit splitting (E[Formula: see text]) of valence band maximum at the [Formula: see text] point is significantly smaller in 2D planner honeycomb structures of graphene, silicene, germanene and BN than that in the corresponding 3D bulk counterparts. For 2D planner honeycomb structure of SiC, it is almost same as that for 3D bulk cubic SiC. The bandgap which opens at the K and K[Formula: see text] points due to spin–orbit coupling (SOC) is very small in flat honeycomb structures of graphene and silicene, while in germanene it is about 2 meV. The buckling in these structures of graphene, silicene and germanene increases the bandgap opened at the K and K[Formula: see text] points due to SOC quadratically, while the E[Formula: see text] of valence band maximum at the [Formula: see text] point decreases quadratically with an increase in the magnitude of buckling.


1975 ◽  
Vol 17 (11) ◽  
pp. 1415-1420 ◽  
Author(s):  
F.R. McFeely ◽  
L. Ley ◽  
S.P. Kowalczyk ◽  
D.A. Shirley

Sign in / Sign up

Export Citation Format

Share Document