THE ELECTRON-SCATTERING FACILITY AT THE SASKATCHEWAN ACCELERATOR LABORATORY

1967 ◽  
Vol 45 (11) ◽  
pp. 3721-3736 ◽  
Author(s):  
L. Katz ◽  
G. A. Beer ◽  
D. E. McArthur ◽  
H. S. Caplan
Keyword(s):  
Electron Scattering ◽  
Magnetic Spectrometer ◽  
Handling System ◽  
Beam Handling

In this paper we describe the accelerator, beam handling system, magnetic spectrometer, and other equipment used to perform electron-scattering experiments. The nuclear information which can be obtained from such experiments is also discussed.

Automatic Control of the Julich Beam Handling System

1971 ◽  
Vol 18 (3) ◽  
pp. 359-360
Author(s):  
J. Reich ◽  
W. Gebauer ◽  
G. Schlienkamp
Keyword(s):  
Automatic Control ◽  
Handling System ◽  
Beam Handling

The VICKSI beam handling system

1974 ◽  
Vol 121 (3) ◽  
pp. 525-532 ◽  
Author(s):  
F. Hinterberger ◽  
B. Efken ◽  
G. Hinderer ◽  
K.H. Maier
Keyword(s):  
Handling System ◽  
Beam Handling

Microcomputer controlled energy variation of an isochronous cyclotron and beam handling system

1978 ◽  
Vol 157 (2) ◽  
pp. 311-314 ◽  
Author(s):  
P.D. Eversheim ◽  
P. von Rossen ◽  
B. Schüller ◽  
F. Hinterberger ◽  
K. Euler
Keyword(s):  
Isochronous Cyclotron ◽  
Handling System ◽  
Energy Variation ◽  
Beam Handling

A magnetic spectrometer for high energy electron scattering experiments

1967 ◽  
Vol 53 ◽  
pp. 293-298 ◽  
Author(s):  
W. Bartel ◽  
B. Dudelzak ◽  
H. Krehbiel ◽  
J.M. McElroy ◽  
U. Meyer-Berkhout ◽  
...  
Keyword(s):  
Electron Scattering ◽  
High Energy ◽  
Energy Electron ◽  
Magnetic Spectrometer ◽  
High Energy Electron

The beam handling system at the bonn isochronous cyclotron

1975 ◽  
Vol 130 (2) ◽  
pp. 335-346 ◽  
Author(s):  
F. Hinterberger ◽  
H.G. Ehrlich ◽  
K. Euler ◽  
W. Hehemeyer ◽  
P. Meyer ◽  
...  
Keyword(s):  
Isochronous Cyclotron ◽  
Handling System ◽  
Beam Handling

Study of charge transfer in FeTi

1983 ◽  
Vol 41 ◽  
pp. 296-297
Author(s):  
J. Taft∅
Keyword(s):  
Charge Transfer ◽  
Charge Distribution ◽  
Electron Scattering ◽  
Periodic System ◽  
Electron Distribution ◽  
Scattering Amplitude ◽  
Transition Elements ◽  
Hartree Fock ◽  
Cscl Structure ◽  
The Right

It is well known that for reflections corresponding to large interplanar spacings (i.e., sin θ/λ small), the electron scattering amplitude, f, is sensitive to the ionicity and to the charge distribution around the atoms. We have used this in order to obtain information about the charge distribution in FeTi, which is a candidate for storage of hydrogen. Our goal is to study the changes in electron distribution in the presence of hydrogen, and also the ionicity of hydrogen in metals, but so far our study has been limited to pure FeTi. FeTi has the CsCl structure and thus Fe and Ti scatter with a phase difference of π into the 100-ref lections. Because Fe (Z = 26) is higher in the periodic system than Ti (Z = 22), an immediate “guess” would be that Fe has a larger scattering amplitude than Ti. However, relativistic Hartree-Fock calculations show that the opposite is the case for the 100-reflection. An explanation for this may be sought in the stronger localization of the d-electrons of the first row transition elements when moving to the right in the periodic table. The tabulated difference between fTi (100) and ffe (100) is small, however, and based on the values of the scattering amplitude for isolated atoms, the kinematical intensity of the 100-reflection is only 5.10-4 of the intensity of the 200-reflection.

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Artefact in 20Å-Resolution Electron Images of Negatively Stained Twodimensional Membrane Protein Crystals

1982 ◽  
Vol 40 ◽  
pp. 92-93
Author(s):  
Douglas L. Dorset ◽  
Barbara Moss
Keyword(s):  
Electron Scattering ◽  
Cross Correlation ◽  
Transmission Function ◽  
Group Symmetry ◽  
Asymmetric Structure ◽  
Object Model ◽  
Phase Object ◽  
Computing Systems ◽  
Resolution Electron ◽  
Plane Group

A number of computing systems devoted to the averaging of electron images of two-dimensional macromolecular crystalline arrays have facilitated the visualization of negatively-stained biological structures. Either by simulation of optical filtering techniques or, in more refined treatments, by cross-correlation averaging, an idealized representation of the repeating asymmetric structure unit is constructed, eliminating image distortions due to radiation damage, stain irregularities and, in the latter approach, imperfections and distortions in the unit cell repeat. In these analyses it is generally assumed that the electron scattering from the thin negativelystained object is well-approximated by a phase object model. Even when absorption effects are considered (i.e. “amplitude contrast“), the expansion of the transmission function, q(x,y)=exp (iσɸ (x,y)), does not exceed the first (kinematical) term. Furthermore, in reconstruction of electron images, kinematical phases are applied to diffraction amplitudes and obey the constraints of the plane group symmetry.

Sign in / Sign up

Export Citation Format

Share Document