On the Landau–Lifshitz relaxation in ferromagnetic metals

1970 ◽  
Vol 48 (24) ◽  
pp. 2906-2911 ◽  
Author(s):  
V. Kamberský
Keyword(s):  
Magnetic Relaxation ◽  
Collision Frequency ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Ferromagnetic Metals ◽  
Spin Flip ◽  
Experimental Values ◽  
Inverse Proportionality

Scattering of ferromagnetic band-electrons by phonons combined with the spin–orbit interaction is shown to cause magnetic relaxation of the Landau–Lifshitz–Gilbert type. Two formally distinct processes are simply analyzed: (a) spin-flip scattering of electrons and (b) ordinary scattering between spin-dependent band levels. Estimates of the magnitude of the damping constant λ are derived for both cases, which agree in orders of magnitude with the experimental values for Fe and Ni. Relations of direct and inverse proportionality between λ and the ordinary collision frequency are found in the cases (a) and (b), respectively.

SPIN–ORBIT INTERACTION IN NUCLEI

1958 ◽  
Vol 36 (5) ◽  
pp. 571-578 ◽  
Author(s):  
B. P. Nigam ◽  
M. K. Sundaresan
Keyword(s):  
Tensor Force ◽  
Orbit Interaction ◽  
Exclusion Principle ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Body Interaction ◽  
The Core ◽  
Reaction Matrix ◽  
Experimental Values ◽  
Doublet Splitting

Brueckner's theory of nuclear structure has been used to estimate the spin–orbit interaction of a single nucleon interacting with the core arising from the tensor force of the two-body interaction. Using Yamaguchi's separable two-body interaction, the doublet splitting for Ca41 and O17 has been calculated (i) in the first Born approximation and (ii) with an exact solution of the reaction matrix in which the exclusion principle has been taken into account. It is found that the values of the splittings calculated exactly are smaller than the experimental values.

scholarly journals Electron spin flip scattering in graphene due to substrate impurities

2013 ◽  
Vol 1505 ◽  
Author(s):  
Aditi Goswami ◽  
Yue Liu ◽  
Feilong Liu ◽  
P. Paul Ruden ◽  
Darryl L. Smith
Keyword(s):  
Electric Field ◽  
Cross Sections ◽  
Relaxation Times ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Scattering Mechanisms ◽  
Spin Flip ◽  
Perpendicular Component ◽  
Scattering Cross Sections

ABSTRACTGraphene is a promising material for electronic and spintronic applications due to its high carrier mobility and low intrinsic spin-orbit interaction. However, extrinsic effects may easily dominate intrinsic scattering mechanisms. The scattering mechanisms investigated here are associated non-magnetic, charged impurities in the substrate (e.g. SiO2) beneath the graphene layer. Such impurities cause an electric field that extends through the graphene and has a non-vanishing perpendicular component. Consequently, the impurity, in addition to the conventional elastic, spin-conserving scattering can give rise to spin-flip processes. The latter is a consequence of a spatially varying Rashba spin-orbit interaction caused by the electric field of the impurity in the substrate. Scattering cross-sections are calculated and, for assumed impurity distributions, relaxation times are estimated.

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

scholarly journals Dirac nodal lines protected against spin-orbit interaction in IrO2

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
J. N. Nelson ◽  
J. P. Ruf ◽  
Y. Lee ◽  
C. Zeledon ◽  
J. K. Kawasaki ◽  
...  
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Nodal Lines
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