Far infrared spectra of amorphous-Si:H thin films on polyethylene

1983 ◽  
Vol 61 (2) ◽  
pp. 305-308
Author(s):  
M. S. Mathur ◽  
H. C. Card ◽  
K. C. Kao ◽  
S. R. Mejia ◽  
G. C. Tabisz
Keyword(s):  
Thin Films ◽  
Microwave Plasma ◽  
Chemical Vapour ◽  
Far Infrared ◽  
Substrate Material ◽  
Absorption Bands ◽  
Silicon Thin Films ◽  
Infrared Measurements ◽  
Hydrogenated Amorphous

Hydrogenated amorphous-silicon thin films (a-Si:H) were deposited by microwave plasma chemical-vapour decomposition of SiH4, on thin polyethylene sheets. The high-resolution, far infrared measurements were performed on these films in the 700–50 cm−1 region on a Nicolet far infrared interferometer. The use of polyethylene as the substrate material permitted the determination of the absorption bands at 656.4, 652, 639.4, and 543 cm−1 with a shoulder at 539 cm−1 and a broad feature at 70.8 cm−1. These features provided evidence for SiH, SiH2 (as predicted by Lucovsky et al.), and SiH3 combinations in the film, as well as far more complex systems.

Determination of Optical Constants of Rough Hydrogenated Amorphous Silicon Thin Films

2013 ◽  
Vol 33 (3) ◽  
pp. 0331001
Author(s):  
丁文革 Ding Wenge ◽  
卢云霞 Lu Yunxia ◽  
马登浩 Ma Denghao ◽  
苑静 Yuan Jing ◽  
侯玉斌 Hou Yubin ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Optical Constants ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Films ◽  
Hydrogenated Amorphous

Quantitative photopyroelectric out-of-phase spectroscopy of amorphous silicon thin films deposited on crystalline silicon

1991 ◽  
Vol 69 (3-4) ◽  
pp. 317-323 ◽  
Author(s):  
Constantinos Christofides ◽  
Andreas Mandelis ◽  
Albert Engel ◽  
Michel Bisson ◽  
Gord Harling
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Dynamic Range ◽  
Crystalline Silicon ◽  
Optical Absorption Coefficient ◽  
Si Substrates ◽  
Silicon Thin Films ◽  
Background Compensation

A photopyroelectric spectrometer with real-time and(or) self-normalization capability was used for both conventional transmission and thermal-wave spectroscopic measurements of amorphous Si thin films, deposited on crystalline Si substrates. Optical-absorption-coefficient spectra were obtained from these measurements and the superior dynamic range of the out-of-phase (quadrature) photopyroelectric signal was established as the preferred measurement method, owing to its zero-background compensation capability. An extension of a photopyroelectric theoretical model was established and successfully tested in the determination of the optical absorption coefficient and the thermal diffusivity of the sample under investigation. Instrumental sensitivity limits of βt ≈ 5 × 10−3 were demonstrated.

scholarly journals Determination of confusion noise for far-infrared measurements

2005 ◽  
Vol 430 (1) ◽  
pp. 343-353 ◽  
Author(s):  
Cs. Kiss ◽  
U. Klaas ◽  
D. Lemke
Keyword(s):  
Far Infrared ◽  
Infrared Measurements

Effect of Nitrogen Doping on the Structure and Optical Properties of N-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 383-390 ◽  
pp. 6980-6985
Author(s):  
Mao Yang Wu ◽  
Wei Li ◽  
Jun Wei Fu ◽  
Yi Jiao Qiu ◽  
Ya Dong Jiang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Frequency Plasma ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) thin films doped with both Phosphor and Nitrogen are deposited by ratio frequency plasma enhanced chemical vapor deposition (PECVD). The effect of gas flow rate of ammonia (FrNH3) on the composition, microstructure and optical properties of the films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and ellipsometric spectra, respectively. The results show that with the increase of FrNH3, Si-N bonds appear while the short-range order deteriorate in the films. Besides, the optical properties of N-doped n-type a-Si:H thin films can be easily controlled in a PECVD system.

A Study of Non-Infrared-Active Hydrogen Bonding in a-Si:H Thin Film using combined Calibrated Temperature Desorption Spectroscopy and FTIR

2000 ◽  
Vol 609 ◽  
Author(s):  
DJ. Santjojo ◽  
J.C.L. Cornish ◽  
M.O.G. Talukder
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Hydrogen Bonding ◽  
Hydrogenated Amorphous Silicon ◽  
Active Hydrogen ◽  
Linear Temperature ◽  
Silicon Thin Films ◽  
Temperature Ramp ◽  
Hydrogenated Amorphous ◽  
Hydrogen Effusion

ABSTRACTNon-infrared-active hydrogen bonding species were investigated by analyzing the infrared spectra and the calibrated temperature desorption spectroscopy (CTDS) spectra of hydrogen released during degassing of hydrogenated amorphous silicon thin films. Samples were degassed gradually using a linear temperature ramp (0.5°C/s). Each stage corresponds to a temperature at which the hydrogen effusion peaks can be found (~ 340°C, ~ 500°C and ~ 610°C). Differences in the amounts of hydrogen obtained from the FTIR spectra and the CTDS measurement correspond to the non-infrared-active, occluded hydrogen.

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