Surface-recombination and doping effects on the minority carriers in polycrystalline silicon

1988 ◽  
Vol 66 (3) ◽  
pp. 200-205
Author(s):  
S. Damaskinos ◽  
A. E. Dixon
Keyword(s):  
Grain Boundaries ◽  
Surface Recombination ◽  
Beam Intensity ◽  
Surface Recombination Velocity ◽  
Minority Carrier Diffusion Length ◽  
Spatially Resolved ◽  
Doping Effects ◽  
Recombination Velocity ◽  
P Type ◽  
Different Levels

A scanning laser microscope was used in a spatially resolved photoconductivity experiment to determine the minority-carrier diffusion length (L) and surface-recombination velocity at grain boundaries (SGB) in (i) n- and p-type Wacker polysilicon and (ii) neutron-transmutation-doped Metron polysilicon as a function of beam intensity. Different values of L were measured on opposite sides of the grain boundaries. For the Metron samples, L was measured at the same grain boundary using a series of samples doped to different levels. These samples had dopant concentrations between 1013 and 1017 atoms/cm3. L was found to decrease from 50 to 5 μm, with decreasing beam intensity, reaching a constant value at low beam intensities. L was also found to remain relatively unchanged for low dopant concentrations. The SGB values were found to increase with increasing beam intensity in both Wacker and Metron samples, ranging between 104 and 105 cm/s. L was also measured with a light-beam-induced-current technique (perpendicular geometry) and found to be in close agreement with values obtained using the photoconductivity technique.

Scanning-laser-microscope measurements of minority-carrier diffusion length and surface recombination velocity in polycrystalline silicon

1985 ◽  
Vol 63 (6) ◽  
pp. 870-875 ◽  
Author(s):  
S. Damaskinos ◽  
A. E. Dixon
Keyword(s):  
Polycrystalline Silicon ◽  
Minority Carrier ◽  
Surface Recombination ◽  
Beam Intensity ◽  
Scanning Laser ◽  
Surface Recombination Velocity ◽  
Minority Carrier Diffusion Length ◽  
Spatially Resolved ◽  
Recombination Velocity ◽  
P Type

A scanning laser microscope was used to study the electronic and recombination properties at grain boundaries of both n- and p-type Wacker polycrystalline silicon in a spatially resolved photoconductivity experiment. The light energy falling on the samples was varied over five orders of magnitude from 10−1 to 10−6 mW. For p-type material the measured L decreased with beam intensity from 150 to 60 μm, reaching a constant value at very low beam intensities. The small focal spot of the microscope allowed the measurements to be extended to include n-type samples. Forthese samples L was found to change from 90 to 18 μm with decreasing beam intensity. The surface recombination velocity SGB was evaluated for both samples. For p-type samples it decreased from 25 000 to 6000 cm/s and for n-type samples from 21 000 to 3000 cm/s with decreasing beam intensity. The quasi-Fermi level separation was determined as a function of the excess minority-carrier-concentration density at the grain boundary and found to increase linearly with beam intensity.

Impact of Phosphorous Gettering and Hydrogenation on the Surface Recombination Velocity of Grain Boundaries in p-Type Multicrystalline Silicon

2015 ◽  
Vol 5 (5) ◽  
pp. 1357-1365 ◽  
Author(s):  
Hang Cheong Sio ◽  
Sieu Pheng Phang ◽  
Thorsten Trupke ◽  
Daniel Macdonald
Keyword(s):  
Grain Boundaries ◽  
Surface Recombination ◽  
Multicrystalline Silicon ◽  
Surface Recombination Velocity ◽  
Recombination Velocity ◽  
P Type

Surface Recombination Investigation in Thin 4H-SiC Layers

1970 ◽  
Vol 17 (2) ◽  
pp. 119-124 ◽  
Author(s):  
Karolis GULBINAS ◽  
Vytautas GRIVICKAS ◽  
Haniyeh P. MAHABADI ◽  
Muhammad USMAN ◽  
Anders HALLÉN
Keyword(s):  
Surface Passivation ◽  
Surface Recombination ◽  
Atomic Layer ◽  
Surface Recombination Velocity ◽  
Lifetime Distributions ◽  
Carrier Lifetimes ◽  
Layer Deposition ◽  
Type Layer ◽  
Recombination Velocity ◽  
P Type

n- and p-type 4H-SiC epilayers were grown on heavily doped SiC substrates. The thickness of the p-type layer was 7 µm and the doping level around 1017 cm 3, while the n-type epilayers were 15 µm thick and had a doping concentration of 3 - 5*1015 cm 3. Several different surface treatments were then applied on the epilayers for surface passivation: SiO2 growth, Al2O3 deposited by atomic layer deposition, and Ar-ion implantation. Using collinear pump - probe technique the effective carrier lifetimes were measured from various places and statistical lifetime distributions were obtained. For surface recombination evaluation, two models are presented. One states that surface recombination velocity (SRV) is equal on both the passivation/epi layer interface (S2) and the deeper interface between the epilayer and the SiC substrate i. e. (S1 = S2). The other model is simulated assuming that SRV in the epilayer/substrate (S1) interface is constant while in the passivation layer/epilayer (S2) interface SRV can be varied S2 < S1. Empirical nomograms are presented with various parameters sets to evaluate S2 values. We found that on the investigated 4H-SiC surfaces S2 ranges from 3x104 to 5x104 assuming that the bulk lifetime is 4 (µs. In Ar+ implanted surfaces S2 is between (105 - 106) cm/s.http://dx.doi.org/10.5755/j01.ms.17.2.479

Surface recombination velocity in p−type InSb upon etching and alpha−particle bombardment

1975 ◽  
Vol 46 (3) ◽  
pp. 1421-1423 ◽  
Author(s):  
P. C. Euthymiou ◽  
P. A. Skountzos ◽  
K. S. Polychronakis
Keyword(s):  
Alpha Particle ◽  
Particle Bombardment ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Recombination Velocity ◽  
P Type

Surface Recombination Velocity in p-Type GaAs

1994 ◽  
Vol 33 (Part 1, No.1A) ◽  
pp. 88-89 ◽  
Author(s):  
Hiroshi Ito ◽  
Tadao Ishibashi
Keyword(s):  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Recombination Velocity ◽  
P Type
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