Transparency of band-gap-shifted InGaAsP/lnP quantum-well waveguides

The properties of band-gap-shifted InGaAsP/InP quantum-well waveguides were investigated. A 90 nm blue-shift of the band gap was obtained by phosphorus ion implantation followed by rapid thermal annealing. It was shown that the absorption constant at the original band edge was reduced from 110 to only 4 cm−1. No waveguide excess loss was observed due to the QW-intermixing process. Good electrical properties of the pin diode were also maintained.

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Chemical Effects in Ion Implantation Induced Quantum Well Intermixing

MRS Proceedings ◽

10.1557/proc-647-o5.16 ◽

2000 ◽

Vol 647 ◽

Author(s):

Todd W. Simpson ◽

Paul G. Piva ◽

Ian V. Mitchell

Keyword(s):

Quantum Well ◽

Ion Implantation ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Blue Shift ◽

Quantum Well Intermixing ◽

Chemical Effects ◽

M 31 ◽

Shift Data ◽

Fluence Dependence

AbstractIon implantation followed by rapid thermal annealing is used to induce layer intermixing and thus selectively blue-shift the emission wavelength of InP-based quantum well hetero- structures. The intermixing is greatly enhanced over thermal intermixing due to the supersaturation of defects. The magnitude of the observed blue-shift has been studied previously as a function of ion fluence and ion mass: the dependence on ion mass is well established, with heavier ions producing a larger shift. We show here that chemical effects can also play a significant role in determining the induced blue-shift. Data are presented from the implantation of the similar mass ions; aluminum (m~27), silicon (m~28) and phosphorus (m~31). The P- induced blue shift displays a monotonic increase with fluence, consistent with previous studies; however, the fluence dependence of Al- and Si-induced blue-shifts both deviate significantly from the behaviour for P. These results have important implications for attempts to scale intermixing behaviour with ion mass.

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Ion Implantation Induced Interdiffusion in Quantum Wells for Optoelectronic Device Integration

MRS Proceedings ◽

10.1557/proc-692-h10.6.1 ◽

2001 ◽

Vol 692 ◽

Author(s):

L. Fu ◽

H. H. Tan ◽

M. I. Cohen ◽

C. Jagadish ◽

L. V. Dao ◽

...

Keyword(s):

Quantum Well ◽

Ion Implantation ◽

Quantum Wells ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Blue Shift ◽

Optoelectronic Device ◽

Emission Wavelength ◽

Device Integration ◽

Proton Implantation

AbstractIon implantation induced intermixing of GaAs/AlGaAs and InGaAs/AlGaAs quantum wells was studied using low temperature photoluminescence. Large energy shifts were observed with proton implantation and subsequent rapid thermal annealing. Energy shifts were found to be linear as a function of dose for doses as high as ∼5×1016 cm−2. Proton implantation and subsequent rapid thermal annealing was used to tune the emission wavelength of InGaAs quantum well lasers as well as detection wavelength of GaAs/AlGaAs quantum well infrared photodetectors (QWIPs). Emission wavelength of lasers showed blue shift whereas detection wavelength of QWIPs was red shifted with intermixing.

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Rapid Thermal Annealing and Ion Implantation of Heteroepitaxial ZnSe/GaAs

MRS Proceedings ◽

10.1557/proc-144-391 ◽

1988 ◽

Vol 144 ◽

Cited By ~ 4

Author(s):

B.J. Skromme ◽

N.G. Stoffel ◽

A.S. Gozdz ◽

M.C. Tamargo ◽

S.M. Shibli

Keyword(s):

Electrical Properties ◽

Molecular Beam Epitaxy ◽

Ion Implantation ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Molecular Beam ◽

Vacancy Formation ◽

Annealing Temperatures ◽

The Creation ◽

Zn Vacancy

ABSTRACTWe describe the effects of rapid thermal annealing on the photoluminescence (PL) and electrical properties of heteroepitaxial ZnSe grown by molecular beam epitaxy on GaAs, using either no cap or plasma-deposited SiO2, Si3N4, or diamond-like C caps, and annealing temperatures from 500 to 800°C. Capless anneals (in contact with GaAs) produce badly degraded PL properties, while capped anneals can prevent this degradation. We show that Si3N4 is significantly more effective in preventing Zn out-diffusion through t e cap than previously employed SiO2 films, as evidenced by less pronounced PL features related to the creation of Zn vacancies during the anneal. Implant damage tends to enhance the Zn vacancy formation. Rapid thermal annealing with Si3N4 caps is shown to optically activate shallow N acceptor implants.

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Electrical Properties Of S+ Implantation in Si GaAs

MRS Proceedings ◽

10.1557/proc-209-499 ◽

1990 ◽

Vol 209 ◽

Author(s):

Guanqun Xia ◽

Anmin Guan ◽

Haiyang Geng ◽

Weiyuan Wang

Keyword(s):

Electrical Properties ◽

Ion Implantation ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Active Layer ◽

Enhanced Diffusion ◽

Gaas Mesfet ◽

Rapid Diffusion

ABSTRACTThe electrical properties of S+ implanted in SI GaAs have been studied. The rapid diffusion and redistribution of S+ implanted in GaAs after conventional thermal annealing (CTA) depends not on conventional diffusion of S+ or VAs, but on the enhanced diffusion by ion implantation. By employing rapid thermal annealing (RTA) techniques enhanced diffusion can be restrained, redistribution of S+ implantation can be decreased greatly and a thin active layer suitable for fabricating GaAs MESFET devices can be obtained.

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