Fragmentations des cétones aliphatiques métastables. II. Compétition entre éliminations de radicaux hydrocarbonés et d'alcanes.

1982 ◽  
Vol 60 (16) ◽  
pp. 2107-2112 ◽  
Author(s):  
Guy Bouchoux ◽  
Yannik Hoppilliard
Keyword(s):  
Molecular Ions ◽  
Low Energy ◽  
Final States ◽  
Energy Channel ◽  
Aliphatic Ketones ◽  
Thermochemical Stability

The fragmentation of the metas table molecular ions of six aliphatic ketones is studied. The ion fragment abundances [M – R•] and [M–RH] (R• being a lateral radical) can be predicted from the thermochemical stability of the corresponding final states. Exceptions to this behavior are found for metastable molecular ions of methylethylketone and methylisopropylketone where it is demonstrated that the lifetime of these ions is too short to permit significant decompositions via the low energy channel after 10−5 s.

scholarly journals Low-energy collisions with atomic and molecular ions in a photocathode electron target

2009 ◽  
Vol 194 (1) ◽  
pp. 012024 ◽  
Author(s):  
A Wolf ◽  
D A Orlov ◽  
C Krantz ◽  
M Lestinsky ◽  
A Shornikov ◽  
...  
Keyword(s):  
Molecular Ions ◽  
Low Energy ◽  
Electron Target

scholarly journals Mirrored low-energy channel for the MiniXRD

2015 ◽  
Author(s):  
E. C. Dutra ◽  
L. P. MacNeil ◽  
S. M. Compton ◽  
B. A. Jacoby ◽  
M. L. Raphaelian
Keyword(s):  
Low Energy ◽  
Energy Channel

The loss of water from molecular ions of aliphatic ketones in electron-impact mass spectra

1969 ◽  
Vol 2 (3) ◽  
pp. 331-333 ◽  
Author(s):  
Adrian N. H. Yeo ◽  
Dudley H. Williams
Keyword(s):  
Electron Impact ◽  
Mass Spectra ◽  
Molecular Ions ◽  
Aliphatic Ketones ◽  
Electron Impact Mass ◽  
Impact Mass

Low energy resonance states of negative molecular ions. Five-membered ring heterocycles and cyclopentadiene

1990 ◽  
Vol 26 (2) ◽  
pp. 240-241
Author(s):  
M. V. Muftakhov ◽  
V. A. Mazunov ◽  
V. I. Khvostenko
Keyword(s):  
Molecular Ions ◽  
Membered Ring ◽  
Low Energy ◽  
Resonance States ◽  
Energy Resonance

scholarly journals Measuring Higgs boson self-couplings with 2 → 3 VBS processes

2021 ◽  
Vol 2021 (10) ◽  
Author(s):  
Junmou Chen ◽  
Chih-Ting Lu ◽  
Yongcheng Wu
Keyword(s):  
Higgs Boson ◽  
Cross Sections ◽  
Effective Field Theory ◽  
Vector Boson ◽  
Effective Field ◽  
Low Energy ◽  
Final States ◽  
Lepton Colliders ◽  
Vector Boson Scattering ◽  
Muon Colliders

Abstract We study the measurement of Higgs boson self-couplings through 2 → 3 vector boson scattering (VBS) processes in the framework of Standard Model effective field theory (SMEFT) at both proton and lepton colliders. The SMEFT contribution to the amplitude of the 2 → 3 VBS processes, taking WLWL → WLWLh and WLWL → hhh as examples, exhibits enhancement with the energy $$ \frac{{\mathcal{A}}^{\mathrm{BSM}}}{{\mathcal{A}}^{\mathrm{SM}}}\sim \frac{E^2}{\Lambda^2} $$ A BSM A SM ~ E 2 Λ 2 , which indicates the sensitivity of these processes to the related dimension-six operators in SMEFT. Simulation of the full processes at both hadron and lepton colliders with a variety of collision energies are performed to estimate the allowed region on c6 and $$ {c}_{\Phi_1} $$ c Φ 1 . Especially we find that, with the help of exclusively choosing longitudinal polarizations in the final states and suitable pT cuts, WWh process is as important as the more widely studied triple Higgs production (hhh) in the measurement of Higgs self-couplings. Our analysis indicates that these processes can play important roles in the measurement of Higgs self-couplings at future 100 TeV pp colliders and muon colliders. However, their cross sections are generally tiny at low energy machines, which makes them much more challenging to explore.

Low Energy Implantation of Boron with Decaborane Ions

2000 ◽  
Vol 610 ◽  
Author(s):  
Maria A. Albano ◽  
Vijay Babaram ◽  
John M. Poate ◽  
Marek Sosnowski ◽  
Dale C. Jacobson
Keyword(s):  
Ion Beam ◽  
Molecular Ions ◽  
Ion Beams ◽  
Ion Source ◽  
Low Energy ◽  
Beam Deflection ◽  
Nuclear Reaction Analysis ◽  
Low Energies ◽  
Beam Currents ◽  
P Type

AbstractFormation of p-type shallow junctions for future generations of Si devices will require ion implantation of B at very low energies (< 1 keV). An alternative to implantation of monomer ions at very low energy is implantation of large molecular ions at a higher energy. In an ion beam of decaborane (B10H14) each of the B atoms carries only 9% of the ion kinetic energy. We have examined ionization properties of decaborane and built an experimental ion source and an implantation apparatus with magnetic mass analysis. Analyzed decaborane ion beams with energies from 2 to 10 keV and beam currents of several microamperes were obtained. Si samples were implanted with decaborane ions and the implanted dose measured by current integration was compared with B content obtained by nuclear reaction analysis. Experiments with electrostatic beam deflection show that the large ions survive the transport in the implanter environment and that neutralization is negligible. During implantation, the retained B dose is reduced in comparison with the nominal implanted dose due to sputtering. Dose loss is greater at 200 eV compared to 500 eV. The properties of decaborane ion beams and the prospects of using them for shallow implantation of B into Si are discussed.

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