Low Energy Implantation of Boron with Decaborane Ions

2000 ◽  
Vol 610 ◽  
Author(s):  
Maria A. Albano ◽  
Vijay Babaram ◽  
John M. Poate ◽  
Marek Sosnowski ◽  
Dale C. Jacobson
Keyword(s):  
Ion Beam ◽  
Molecular Ions ◽  
Ion Beams ◽  
Ion Source ◽  
Low Energy ◽  
Beam Deflection ◽  
Nuclear Reaction Analysis ◽  
Low Energies ◽  
Beam Currents ◽  
P Type

AbstractFormation of p-type shallow junctions for future generations of Si devices will require ion implantation of B at very low energies (< 1 keV). An alternative to implantation of monomer ions at very low energy is implantation of large molecular ions at a higher energy. In an ion beam of decaborane (B10H14) each of the B atoms carries only 9% of the ion kinetic energy. We have examined ionization properties of decaborane and built an experimental ion source and an implantation apparatus with magnetic mass analysis. Analyzed decaborane ion beams with energies from 2 to 10 keV and beam currents of several microamperes were obtained. Si samples were implanted with decaborane ions and the implanted dose measured by current integration was compared with B content obtained by nuclear reaction analysis. Experiments with electrostatic beam deflection show that the large ions survive the transport in the implanter environment and that neutralization is negligible. During implantation, the retained B dose is reduced in comparison with the nominal implanted dose due to sputtering. Dose loss is greater at 200 eV compared to 500 eV. The properties of decaborane ion beams and the prospects of using them for shallow implantation of B into Si are discussed.

Electrical Properties of Ultra Shallow p Junction on n type Si Wafer Using Decaborane Ion Implantation

2001 ◽  
Vol 686 ◽  
Author(s):  
Jae-Hoon Song ◽  
Duck-Kyun Choi ◽  
Min-Seok Oh ◽  
Won-Kook Choi
Keyword(s):  
Electrical Properties ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Source ◽  
Low Energy ◽  
Boron Ions ◽  
Boron Dopant ◽  
P Type ◽  
Dopant Source ◽  
Si Wafer

AbstractThe junction depth should be less than 0.05 microns to fabricate sub 0.1 micron devices. This requires implanting boron with energy of less than 1 keV. One drawback in a low energy ion source is low throughput due to low ion beam current. At present, boron known for a major p-type dopant for PMOSFET has problem to easily diffuse into Si wafer even in rapid thermal processing by high diffusivity. To resolve this problem, decaborane (B10H14) molecules are implanted to make p+/n junction on n-type Si wafers for low-energy boron dopant source. Ionized decaborane is accelerated at 1∼10 kV and implanted up to dosages from 1×1012/cm2 to 5×1013/cm2. Afterwards, Decaborane implanted Si wafers were post-annealed for 10 sec at 800, 900 and 1000°C, respectively. From RBS results on as-implanted n-type Si wafer implanted at 5 kV, it is observed there are amorphous Si layers with 4 nm in depth and boron ions are implanted up to 1∼5 nm in depth from SIMS analysis. The electrical properties of these p-n junctions are 127∼130 ω/sq. as sheet resistance, +0.3 V turn-on voltage and −1.1 V breakdown voltage obtained from I-V measurement.

Decaborane as Ion Source Material for Boron Implantation

1999 ◽  
Vol 568 ◽  
Author(s):  
Marek Sosnowski ◽  
Ravidath Gurudath ◽  
John Poate ◽  
Anthony Mujsce ◽  
Dale Jacobson
Keyword(s):  
Coulomb Repulsion ◽  
High Volume ◽  
Volume Density ◽  
Molecular Ions ◽  
Ion Source ◽  
Enhanced Diffusion ◽  
Implantation Depth ◽  
Low Energies ◽  
Boron Implantation ◽  
P Type

ABSTRACTFormation of p-type shallow junctions for future generations of Si technology will require ion implantation of B at very low energies, i.e. below 1 keV, where the beam formation and transport at reasonably high currents are hindered by Coulomb repulsion of ions at high volume density. An alternative to implantation of monomer ions at a very low energy is implantation of large molecular ions at a higher energy. In the latter case, the implantation depth of the atoms corresponds to a fraction of the beam energy, partitioned between the atoms of the molecule. The decaborane molecule (B10H14) is of particular interest for implantation of p-type shallow junction in Si, because each of the B atoms carries only 9% of the molecule's kinetic energy. Experimental PMOS devices made using decaborane implantation have been demonstrated recently. It also has been shown that transient enhanced diffusion (TED) of B in Si implanted with B ions and with decaborane ions at the equivalent dose and energy are the same. The prospect for using decaborane in ion sources is examined, based on measurements of its ionization and dissociation properties. It is shown that decaborane molecules are effectively ionized by electron impact in the energy range near 100 eV.

scholarly journals VUV Spectroscopy of Ar9+ and Kr9+ Low Energy Collision with H2

1988 ◽  
Vol 102 ◽  
pp. 365-368
Author(s):  
M. Druetta ◽  
T. Bouchama ◽  
S. Martin ◽  
J. Désesquelles
Keyword(s):  
Cross Sections ◽  
Ion Beam ◽  
Grazing Incidence ◽  
Ion Source ◽  
Low Energy ◽  
Absolute Calibration ◽  
Error Bar ◽  
Entrance Hole ◽  
Set Up ◽  
Beam Currents

Photon spectroscopy of low energy collisions between multicharged ions and neutrals has opened new possibilities of wavelength and energy level determination since recent multicharged ion sources like the E.C.R. source, giving μA electric current of highly multicharged ions, are available.The experimental set-up has been already described (1.2) The ion beam is produced by an E.C.R. ion source. Light emitted as a result of the collision is observed at 25* to the beam axis with a 3m grazing incidence (82*) spectrometer equipped with a 300 or 600 lines/mm grating blazed at 55.2 or 27.6 nm respectively. The detection is realised by micro-channel plates (MCP). Typical beam currents are 0.45 and 0.40 μA for Kr9+and Ar9+respectively, through the 8 mm diameter entrance hole of the gas cell. The gas pressure was kept at 5 × 10−5mbar. The emission cross sections of all the new observed lines have been mesured. Taking into account the statistics; the error on the beam intensity due to double collisions; the errors on the pressure, on the relative efficiency curve of the spectrometer and on the absolute calibration; we may estimate the error bar to ± 30%.

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

scholarly journals Upgrading the ECR ion source within FAMA

2018 ◽  
Vol 33 (1) ◽  
pp. 47-52
Author(s):  
Andrey Efremov ◽  
Sergey Bogomolov ◽  
Vladimir Bekhterev ◽  
Aleksandar Dobrosavljevic ◽  
Nebojsa Neskovic ◽  
...  
Keyword(s):  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Ion Source ◽  
Vacuum System ◽  
Multiply Charged Ions ◽  
Inlet System ◽  
Multiply Charged ◽  
Microwave System ◽  
Beam Currents ◽  
Charged Ions

Recent upgrading of the Facility for Modification and Analysis of Materials with Ion Beams - FAMA, in the Laboratory of Physics of the Vinca Institute of Nuclear Sciences, included the modernization of its electron cyclotron resonance ion source. Since the old ion source was being extensively used for more than 15 years for production of multiply charged ions from gases and solid substances, its complete reconstruction was needed. The main goal was to reconstruct its plasma and injection chambers and magnetic structure, and thus intensify the production of multiply charged ions. Also, it was decided to refurbish its major subsystems - the vacuum system, the microwave system, the gas inlet system, the solid substance inlet system, and the control system. All these improvements have resulted in a substantial increase of ion beam currents, especially in the case of high charge states, with the operation of the ion source proven to be stable and reproducible.

Low‐energy (5

1995 ◽  
Vol 13 (6) ◽  
pp. 2836-2842 ◽  
Author(s):  
Y.‐W. Kim ◽  
I. Petrov ◽  
H. Ito ◽  
J. E. Greene
Keyword(s):  
Ion Beam ◽  
Ultrahigh Vacuum ◽  
Ion Source ◽  
Low Energy ◽  
High Brightness ◽  
Ion Beam Deposition ◽  
Beam Deposition

THE NEW LOW ENERGY ION BEAM ANALYSIS FACILITY AT MAPUTO UNIVERSITY

1995 ◽  
Vol 05 (04) ◽  
pp. 249-253
Author(s):  
R.J. UTUI ◽  
N.P.O. HOMMAN ◽  
K.G. MALMQVIST
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Proton Accelerator ◽  
Nuclear Reaction Analysis ◽  
Beam Diagnostics ◽  
Ion Beam Analysis ◽  
X Ray ◽  
Beam Analysis ◽  
Set Up ◽  
Eduardo Mondlane University

A new Ion Beam Analysis (IBA) facility which was recently installed in the Department of Physics of the Eduardo Mondlane University of Maputo, Mozambique, is described. The set up is based on a low energy (500 keV) Van de Graaff proton accelerator and is intended to be used in particle induced X-ray emission (PIXE), Rutherford Backscattering (RBS) and nuclear reaction analysis (NRA). Preliminary experiments on beam diagnostics were performed successfully and the followed procedure is described.

Composite Nanowires from Ion Beam Modification of Si Nanowires

1999 ◽  
Vol 581 ◽  
Author(s):  
X. T. Zhou ◽  
H. Y. Peng ◽  
N. G. Shang ◽  
N. Wang ◽  
I. Bello ◽  
...  
Keyword(s):  
Reaction Pathway ◽  
Ion Beam ◽  
Ion Source ◽  
Low Energy ◽  
Hydrogen Ions ◽  
Si Nanowires ◽  
Interacting Particles ◽  
Ion Beam Modification ◽  
Ion Beam Deposition ◽  
Beam Deposition

ABSTRACTComposite nanowires with typical diameters of 30-100nm, which consisted of Si, β-SiC, amorphous carbon were converted from Si nanowires by ion beam deposition. The Si nanorods were exposed to broad low energy ion beams. The low energy hydrocarbon, argon and hydrogen ions, generated in a Kaufman ion source, reacted with Si nanowires and formed the composite nanowires. It has been assumed that the reaction pathway to form the composite nanowires were driven by both thermal diffusion and kinetic energic of interacting particles.

Focussed Ion Beams from Liquid Metal Ion Sources Theory and Applications

1985 ◽  
Vol 45 ◽  
Author(s):  
David R Kingham ◽  
Vincent J Mifsud
Keyword(s):  
Liquid Metal ◽  
Metal Ion ◽  
Ion Beam ◽  
Ion Beams ◽  
Ion Source ◽  
Physical Reason ◽  
Probe Size ◽  
Focussed Ion Beam ◽  
Source Current ◽  
Manufacturing Techniques

ABSTRACTA theoretical model of liquid metal ion source (LMIS) operation has been developed by Kingham and Swanson. In this paper we consider beams from LMIS on the basis of this model. In particular we consider properties such as angular intensity, energy spread and relative abundance of differently charged species of the ion beam, and the dependence of these properties on source current and elemental composition. The conclusion is that the brightest focussed beam for a given probe size is attainable at the lowest possible source current as previously stated by Swanson. LMIS sources have an onset current of typically 1-2[A and will not operate stably below this current, thus limiting the maximum focussed ion beam brightness. The physical reason for this is discussed. The relevance of these properties to fine focussed ion beam applications, particularly semiconductor processing, is discussed. Useful, and in some cases unique, device manufacturing techniques can be postulated using one or more of the momentum, energy or atomic addition properties inherant tothis type of system. Advanced research tools are discussed, together with some examples of the use of microfocussed ion beams with probe sizes down to less than 50nm. Immediate applications include: high resolution ion imaging and SIMS microanalysis; ion beam machining and microfabrication; ion beam resist exposure and ion beam mask repair.

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