TUNNELING BETWEEN SPIN POLARIZED EDGE STATES STUDIED AT HIGH MAGNETIC FIELDS

2005 ◽  
Author(s):  
G. SUKHODUB ◽  
F. HOHLS ◽  
R. J. HAUG ◽  
D. K. MAUDE ◽  
D. REUTER ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
High Magnetic Fields ◽  
Edge States ◽  
Spin Polarized

MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS

SPIN ◽  
2013 ◽  
Vol 03 (04) ◽  
pp. 1340011
Author(s):  
B. W. WESSELS
Keyword(s):  
Magnetic Fields ◽  
Room Temperature ◽  
Magnetic Semiconductors ◽  
Magnetic Semiconductor ◽  
High Magnetic Fields ◽  
Narrow Gap ◽  
Carrier Scattering ◽  
Spin Polarized ◽  
Semiconductor Spintronics ◽  
Semiconductor Heterojunctions

Narrow gap III–V semiconductors have been investigated for semiconductor spintronics. By alloying these semiconductors with manganese magnetic semiconductors result. Large magnetoresistance (MR) effects have been observed in narrow gap magnetic semiconductor p–n heterojunctions. The MR which is positive is attributed to spin selective carrier scattering. For an InMnAs / InAs heterojunction a diode MR of 2680% is observed at room temperature and high magnetic fields. This work indicates that highly spin-polarized magnetic semiconductor heterojunctions can be realized that operate at room temperature. Devices based on the MR include spin diodes and bipolar magnetic junction transistors. We utilize the diode MR states to create a binary logic family.

TUNNELING BETWEEN SPIN POLARIZED EDGE STATES STUDIED AT HIGH MAGNETIC FIELDS

2004 ◽  
Vol 18 (27n29) ◽  
pp. 3649-3652 ◽  
Author(s):  
G. SUKHODUB ◽  
F. HOHLS ◽  
R. J. HAUG ◽  
D. K. MAUDE ◽  
D. REUTER ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Electron System ◽  
Spin Splitting ◽  
Edge States ◽  
Dimensional Electron ◽  
Energy Gaps ◽  
Lowest Landau Level ◽  
Wide Range ◽  
Spin Polarized ◽  
Dimensional Electron System

We utilize the tunneling between edge states of the lowest Landau level to study the behavior of the spin splitting in a wide range of magnetic fields up to 28 T. We find that the Zeeman energy with the bare |g*|=0.44 of GaAs mainly accounts for the observed threshold in the bias voltage between edge states. There is no evidence for the exchange interaction considerably affecting the measured energy gaps at the edge of a two-dimensional electron system.

Spin-Polarized Atomic Hydrogen in Very High Magnetic Fields

1987 ◽  
Vol 26 (S3-1) ◽  
pp. 229 ◽  
Author(s):  
J. D. Gillaspy ◽  
Isaac F. Silvera ◽  
J. S. Brooks
Keyword(s):  
Magnetic Fields ◽  
Atomic Hydrogen ◽  
High Magnetic Fields ◽  
Spin Polarized ◽  
Very High
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