scholarly journals Valence band structure, edge states, and interband absorption in quantum-well wires in high magnetic fields

1995 ◽  
Vol 52 (19) ◽  
pp. 14118-14125 ◽  
Author(s):  
G. Goldoni ◽  
A. Fasolino
2009 ◽  
Vol 16 (05) ◽  
pp. 689-696
Author(s):  
M. GUNES ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
K. AKGUNGOR ◽  
I. SÖKMEN

Valence band structure with spin–orbit (SO) coupling of GaAs/Ga 1-x Al x As square quantum well (SQW) under the electric field by a calculation procedure based on a finite element method (FEM) is investigated using the multiband effective mass theory ([Formula: see text] method). The validity of the method is confirmed with the results of D. Ahn, S. L. Chuang and Y. C. Chang (J. Appl. Phys.64 (1998) 4056), who calculated valence band structure, using axial approximation for Luttinger–Kohn Hamiltonian and finite difference method. Our results demonstrated that SO coupling and electric field have significant effects on the valence band structure.


1997 ◽  
Vol 484 ◽  
Author(s):  
K. S. Chan ◽  
Michael C. Y. Chan

AbstractIn this paper, we study the interdiffusion of tensile strained GaAsyPi.y /A10 33Ga0 67As single QW structures with a well width of 60Å. Different P concentrations in the as-grown well are chosen to obtain different tensile strains in the QW. Interdiffusion induces changes in the tensile strains and confinement potentials, which consequently change the valence band structure and the optical gain.


1994 ◽  
Vol 49 (16) ◽  
pp. 11210-11221 ◽  
Author(s):  
S. L. Wong ◽  
R. J. Warburton ◽  
R. J. Nicholas ◽  
N. J. Mason ◽  
P. J. Walker

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