HIGH QUALITY InP EPITAXIAL GROWTH USING FLOW RATE MODULATION METALORGANIC CHEMICAL VAPOR DEPOSITION

Author(s):  
M. K. LEE ◽  
C. C. HU
1997 ◽  
Vol 08 (04) ◽  
pp. 575-586
Author(s):  
M. K. Lee ◽  
C. C. Hu

The characteristics of modified flow rate modulation metalorganic chemical deposition is studied. From observation with the atomic force microscope, the flatness of a InP homoepitaxial layer is improved to atomic scale by phosphine modulation metalorganic chemical vapor deposition. The full width at half maximum 5.6 meV of photoluminescence at 77 K can be achieved under optimum growth conditions. The satellite peak around the near band emission can also be reduced to a negligible quantity under optimum growth conditions. Also, MFME can improve the electrical characteristics of the epilayer with higher electron mobility and lower compensation ratio.


2009 ◽  
Vol 2 ◽  
pp. 045502 ◽  
Author(s):  
Eiji Fujimoto ◽  
Masatomo Sumiya ◽  
Tsuyoshi Ohnishi ◽  
Kenji Watanabe ◽  
Mikk Lippmaa ◽  
...  

2011 ◽  
Vol 32 (9) ◽  
pp. 896-901 ◽  
Author(s):  
陈耀 CHEN Yao ◽  
王文新 WANG Wen-xin ◽  
黎艳 LI Yan ◽  
江洋 JIANG Yang ◽  
徐培强 XU Pei-qiang ◽  
...  

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