HIGH QUALITY InP EPITAXIAL GROWTH USING FLOW RATE MODULATION METALORGANIC CHEMICAL VAPOR DEPOSITION
1997 ◽
Vol 08
(04)
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pp. 575-586
1994 ◽
Vol 145
(1-4)
◽
pp. 82-86
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Modulated precursor flow epitaxial growth of ternary AlGaN by metalorganic chemical vapor deposition
2008 ◽
Vol 310
(23)
◽
pp. 4880-4884
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2011 ◽
Vol 32
(9)
◽
pp. 896-901
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