Low-pressure metalorganic chemical vapor deposition of high-quality AlN and GaN thin films on sapphire and silicon substrates

1995 ◽  
Author(s):  
Patrick Kung ◽  
Xiaolong Zhang ◽  
Erwan Bigan ◽  
Manijeh Razeghi ◽  
Adam W. Saxler
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Substrates ◽  
High Quality ◽  
Metalorganic Chemical

High-Quality InSb Growth on GaAs and Si by Low-Pressure Metalorganic Chemical Vapor Deposition

1992 ◽  
Vol 281 ◽  
Author(s):  
Y. H. Choi ◽  
R. Sudharsanan ◽  
C. Besikci ◽  
E. Bigan ◽  
M. Razeghi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Si Substrates ◽  
Gaas Substrates ◽  
Metalorganic Chemical

ABSTRACTWe report the first InSb film growth on Si by low-pressure metalorganic chemical vapor deposition. High-quality layers of InSb have been grown on Si and GaAs substrates. InSb films displayed mirror-like morphology on both substrates. X-ray full width at half maximum of 171 arcsec on GaAs and 361 arcsec on Si for a InSb layer thickness of 3.1 μm were measured. Room-temperature Hall mobilities of 67,000 and 48,000 cm2/V.s with carrier concentration of 1.5×1016 and 2.3×1016 cm−3 have been achieved for InSb films grown on GaAs and Si substrates, respectively. A 4.8 μ-thick InSb film on GaAs exhibited mobility of 76,200 cm2/Vs at 240 K.

High quality self‐nucleated AlxGa1−xN layers on (00.1) sapphire by low‐pressure metalorganic chemical vapor deposition

1994 ◽  
Vol 65 (16) ◽  
pp. 2024-2026 ◽  
Author(s):  
D. K. Wickenden ◽  
C. B. Bargeron ◽  
W. A. Bryden ◽  
J. Miragliotta ◽  
T. J. Kistenmacher
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Metalorganic Chemical
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