THE NEW LOW ENERGY ION BEAM ANALYSIS FACILITY AT MAPUTO UNIVERSITY

1995 ◽  
Vol 05 (04) ◽  
pp. 249-253
Author(s):  
R.J. UTUI ◽  
N.P.O. HOMMAN ◽  
K.G. MALMQVIST
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Proton Accelerator ◽  
Nuclear Reaction Analysis ◽  
Beam Diagnostics ◽  
Ion Beam Analysis ◽  
X Ray ◽  
Beam Analysis ◽  
Set Up ◽  
Eduardo Mondlane University

A new Ion Beam Analysis (IBA) facility which was recently installed in the Department of Physics of the Eduardo Mondlane University of Maputo, Mozambique, is described. The set up is based on a low energy (500 keV) Van de Graaff proton accelerator and is intended to be used in particle induced X-ray emission (PIXE), Rutherford Backscattering (RBS) and nuclear reaction analysis (NRA). Preliminary experiments on beam diagnostics were performed successfully and the followed procedure is described.

scholarly journals A New High-Throughput Focused MeV Ion-Beam Analysis Setup

Instruments ◽  
2021 ◽  
Vol 5 (1) ◽  
pp. 10
Author(s):  
Sören Möller ◽  
Daniel Höschen ◽  
Sina Kurth ◽  
Gerwin Esser ◽  
Albert Hiller ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Complete Analysis ◽  
Nuclear Reaction Analysis ◽  
Beam Optics ◽  
Single Measurement ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Technical Solutions

The analysis of material composition by ion-beam analysis (IBA) is becoming a standard method, similar to electron microscopy. A pool of IBA methods exists, from which the combination of particle-induced-X-ray emission (PIXE), particle induced gamma-ray analysis (PIGE), nuclear-reaction-analysis (NRA), and Rutherford-backscattering-spectrometry (RBS) provides the most complete analysis over the whole periodic table in a single measurement. Yet, for a highly resolved and accurate IBA analysis, a sophisticated technical setup is required integrating the detectors, beam optics, and sample arrangement. A new end-station developed and installed in Forschungszentrum Jülich provides these capabilities in combination with high sample throughput and result accuracy. Mechanical tolerances limit the device accuracy to 3% for RBS. Continuous pumping enables 5*10−8 mbar base pressure with vibration amplitudes < 0.1 µm. The beam optics achieves a demagnification of 24–34, suitable for µ-beam analysis. An in-vacuum manipulator enables scanning 50 × 50 mm² sample areas with 10 nm accuracy. The setup features the above-mentioned IBA detectors, enabling a broad range of analysis applications such as the operando analysis of batteries or the post-mortem analysis of plasma-exposed samples with up to 3000 discrete points per day. Custom apertures and energy resolutions down to 11 keV enable separation of Fe and Cr in RBS. This work presents the technical solutions together with the quantification of these challenges and their success in the form of a technical reference.

scholarly journals Aluminium incorporation in AlxGa1−xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction

2008 ◽  
Vol 516 (23) ◽  
pp. 8447-8452 ◽  
Author(s):  
A. Redondo-Cubero ◽  
R. Gago ◽  
F. González-Posada ◽  
U. Kreissig ◽  
M.-A. di Forte Poisson ◽  
...  
Keyword(s):  
Comparative Study ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Ion Beam Analysis ◽  
X Ray ◽  
Beam Analysis

AIR PARTICULATE RESEARCH CAPABILITY AT THE NEW ZEALAND ION BEAM ANALYSIS FACILITY USING PIXE AND IBA TECHNIQUES

2005 ◽  
Vol 15 (03n04) ◽  
pp. 249-255 ◽  
Author(s):  
W. J. TROMPETTER ◽  
A. MARKWITZ ◽  
P. DAVY
Keyword(s):  
Particulate Matter ◽  
New Zealand ◽  
Limit Of Detection ◽  
Ion Beam ◽  
Anthropogenic Sources ◽  
Ion Beam Analysis ◽  
Air Particulate Matter ◽  
X Ray ◽  
Air Particulate ◽  
Beam Analysis

PIXE and Ion Beam Analysis are one of the few techniques that can be used to identify the elemental composition of air particulates without destroying the filter sample. They are key tools for identifying the sources and determining the relative contribution of biogenic and anthropogenic sources of air particulate matter pollution in our environment. Over the last 8 years, specialised equipment has been designed and built at the New Zealand Ion Beam Analysis facility in Lower Hutt for semi automated analysis of air filters. The equipment and experimental techniques have been refined to improve sensitivities for many of the elements in the periodic table. At GNS, sensitivities have recently been further improved by using two X-ray detectors simultaneously with different amounts of X-ray filtering and collimation. The average limit of detection is improved from 66 ng/cm2 (typical for a setup using a single detector) to 35 ng/cm2 using two detectors simultaneously. The New Zealand Ion Beam Analysis facility now routinely analyses air particulate matter collected on filters from several locations around New Zealand. In this paper, results of air particulate studies from several locations in the Wellington region are presented.

Structure and morphology of copper oxide composite materials synthesized by the arc discharge method

2018 ◽  
Vol 32 (34n36) ◽  
pp. 1840067 ◽  
Author(s):  
F. Fang ◽  
J. Rogers ◽  
P. P. Murmu ◽  
J. Kennedy
Keyword(s):  
Composite Materials ◽  
Copper Oxide ◽  
Arc Discharge ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
X Ray ◽  
Oxide Composite ◽  
Beam Analysis ◽  
Arc Current ◽  
Discharge Method

Copper oxide is a semiconducting compound with a narrow band gap and is used for photoconductive and photothermal applications. Most of the synthesis methods for the preparation of copper oxide composite materials either are unsuitable for mass fabrication or inevitably introduce unwanted impurities. In this work, we report on the synthesis of copper oxide composite materials by the arc discharge method with a pure copper rod as the anode and graphite as the cathode. Ion beam analysis techniques, particle-induced X-ray emission and Rutherford backscattering spectrometry were used to probe the impurities in the copper oxide composites. Ion beam analysis results revealed copper and oxygen as constituent elements with no impurities. X-ray diffraction results discovered the presence of CuO, Cu2O and Cu phases in the composite materials. The morphology of the as-synthesized copper oxide was studied by scanning electron microscopy. Results clearly demonstrated that spherical particles were obtained with an average diameter of 14 [Formula: see text]m (range 2–85 [Formula: see text]m), 35 [Formula: see text]m (range 20–100 [Formula: see text]m) and 50 [Formula: see text]m (range 30–120 [Formula: see text]m) for the arc current of 60 A, 80 A and 95 A, respectively. It was found that the morphology can be controlled by the arc discharge parameters, e.g. a lower arc discharge current contributed to a smaller particle size. This is because the electric arc current influences the nucleation and the growth of the spherical structures. Due to its simplicity of synthesis, the proposed arc discharge is a promising technique for the fabrication of copper oxide composite materials for optical and electrical applications.

Ion beam analysis with external beams: Recent set-up improvements

2002 ◽  
Vol 188 (1-4) ◽  
pp. 135-140 ◽  
Author(s):  
T. Calligaro ◽  
J.-C. Dran ◽  
B. Moignard ◽  
L. Pichon ◽  
J. Salomon ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Set Up

Enhancement of Uranium Oxidation Resistance by Molybdenum Implantation

1983 ◽  
Vol 27 ◽  
Author(s):  
E. N. Kaufmann ◽  
R. G. Musket ◽  
C.A. Colmenares ◽  
B. R. Appleton
Keyword(s):  
Weight Gain ◽  
Oxidation Resistance ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Ion Beam Analysis ◽  
Uranium Metal ◽  
X Ray ◽  
Uranium Oxidation ◽  
Beam Analysis ◽  
The Way

ABSTRACTInitial studies of the oxidation resistance imparted to uranium metal through the implantation of Mo ions have shown that a significantly increased resistance can be achievedfor doses of 5 ×1016/cm2. No enhancement of oxidation resistance was found for doses below 1 ×1016/cm2. We report results of weight-gain measurements, ion-beam analysis, and x-ray diffraction, as well as observations of the way in which the protective implanted layer fails at long exposure times.

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