1/fγ DRAIN CURRENT NOISE MODEL IN ULTRATHIN OXIDE MOSFETS

2004 ◽  
Vol 04 (02) ◽  
pp. L297-L307 ◽  
Author(s):  
JONGHWAN LEE ◽  
GIJS BOSMAN
Keyword(s):  
Drain Current ◽  
Trapping Efficiency ◽  
Doping Profile ◽  
Noise Model ◽  
Current Noise ◽  
Device Structure ◽  
Processing Technologies ◽  
New Device ◽  
Noise Characteristics ◽  
Ultrathin Oxide

A 1/fγ drain current noise model for deep-submicron MOSFETs with ultrathin oxide is presented. Based on the number and correlated mobility fluctuation mechanisms, the model is derived incorporating a tunneling assisted-thermally activated process and a more realistic trap distribution inside the gate oxide layer. The effects of the device structure and processing technologies on the noise characteristics are taken into consideration through a quadratic mobility degradation factor, a parasitic resistance, a doping profile, and trap-related parameters. For ultrathin oxide MOSFETs, the trapping efficiency ratio and the scattering rate are expressed in terms of the trap distance and the inversion carrier density, enabling an accurate prediction of the noise behavior. From quantitative results simulated with extracted data, it is shown that the new model is applicable to design future CMOS devices and new device processing technologies, and is suitable to be implemented in circuit simulators.

Noise test method for dual-gate MOSFET device

2019 ◽  
Vol 33 (31) ◽  
pp. 1950387
Author(s):  
Xiaofei Jia ◽  
Wenhao Chen ◽  
Bing Ding ◽  
Liang He
Keyword(s):  
Shot Noise ◽  
Thermal Noise ◽  
Drain Current ◽  
Test Method ◽  
Current Noise ◽  
Electronic Components ◽  
Positive Role ◽  
Noise Characteristics ◽  
20 Nm ◽  
Device Noise

In recent years, with the development of mesoscopic physics and nanoelectronics, the research on noise and testing technology of electronic components has been developed. It is well known that noise can characterize the transmission characteristics of carriers in nanoscale electronic components. With the continuous shrinking of the device size, the carrier transport of nanoscale MOSFET devices has been gradually transformed from the traditional drift-diffusion to become the quasi-ballistic or ballistic transport, and its current noise contains granular and thermal noise. The paper by Jeon et al. [The first observation of shot noise characteristics in 10-nm scale MOSFETs, in Proc. 2009 Symp. VLSI Technology (IEEE, Honolulu, 2009), pp. 48–49] presents the variation relation of 20 nm MOSFET current noise with source–drain current and voltage, and its current noise characteristic is between thermal noise and shot noise, so 20 nm MOSFET current noise is shot noise and thermal noise. The paper by Navid et al. [J. Appl. Phys. 101 (2007) 124501] shows through simulation that the 60 nm MOSFET current noise is suppressed shot noise and thermal noise. At present, the current noise has seriously affected the basic performance of the device, thus the circuit cannot work normally. Therefore, it is necessary to study the generation mechanism and characteristics of current noise in electronic components so as to suppress device noise, which can not only realize the reduction of device noise, but also play a positive role in the work-efficiency, life-span and reliability of electronic components.

Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node

2019 ◽  
Vol 11 (6) ◽  
pp. 349-355 ◽  
Author(s):  
Weitao Cheng ◽  
Akinobu Teramoto ◽  
Tadahiro Ohmi
Keyword(s):  
Structure Design ◽  
Device Structure ◽  
New Device

The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs

Doklady BGUIR ◽  
2022 ◽  
Vol 19 (8) ◽  
pp. 81-86
Author(s):  
I. Yu. Lovshenko ◽  
A. Yu. Voronov ◽  
P. S. Roshchenko ◽  
R. E. Ternov ◽  
Ya. D. Galkin ◽  
...  
Keyword(s):  
Field Effect ◽  
Proton Energy ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Proton Flux ◽  
High Electron ◽  
Electrical Characteristics ◽  
Device Structure ◽  
Dual Channel ◽  
Effect Transistor

The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.

Methods for Evaluating the Influence of Non-Sinusidal Voltage on Capacitor Units in Power Supply Systems

2021 ◽  
Vol 64 (2) ◽  
pp. 86-92
Author(s):  
Eduard Kourennyi ◽  
◽  
Alexander Bulgakov ◽  
Arkady Kolomytsev ◽  
◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Power Supply ◽  
Voltage Pulse ◽  
Impulse Noise ◽  
Noise Model ◽  
Current Noise ◽  
Practical Calculation ◽  
Sinusoidal Voltage ◽  
Useful Signal ◽  
Supply Systems

The problems of evaluating the EMC for capacitor units (CU) in power supply systems are considered. The admissible value of the current non-sinusoidal component for the CU was found, it corresponds to the actual standards. The dynamic model of the «supply line – CU» circuit has been substantiated. An equivalent circuit is given. A non-sinusoidal signal is considered as the sum of a sinusoidal and non-sinusoidal component. As a non-sinusoidal component, a voltage pulse noise model with oppositely polar periodic rectangular pulses and pauses was used. Two approaches to determine the useful signal are considered. A physically substantiated interpretation of the concept of non-sinusoidal voltage is proposed for impulse noise. Expressions are given to determine the current noise of the CU. An example of the practical calculation of voltage and current distortion is given. The graphs of the voltage impulse noise and the resulting current noise are shown. An algorithm has been developed to evaluate the effectiveness of means for reducing impulse noise.

scholarly journals Noise Modeling and Simulation of Giant Magnetic Impedance (GMI) Magnetic Sensor

Sensors ◽  
2020 ◽  
Vol 20 (4) ◽  
pp. 960
Author(s):  
Fang Jin ◽  
Xin Tu ◽  
JinChao Wang ◽  
Biao Yang ◽  
KaiFeng Dong ◽  
...  
Keyword(s):  
Modeling And Simulation ◽  
Noise Spectrum ◽  
Low Noise ◽  
Noise Model ◽  
Magnetic Noise ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Noise Modeling ◽  
Noise Characteristics ◽  
Spectrum Curve

The detection resolution of a giant magneto-impedance (GMI) sensor is mainly limited by its equivalent input magnetic noise. The noise characteristics of a GMI sensor are evaluated by noise modeling and simulation, which can further optimize the circuit design. This paper first analyzes the noise source of the GMI sensor. It discusses the noise model of the circuit, the output sensitivity model and the modeling process of equivalent input magnetic noise. The noise characteristics of three modules that have the greatest impact on the output noise are then simulated. Finally, the simulation results are verified by experiments. By comparing the simulated noise spectrum curve and the experimental noise spectrum curve, it is demonstrated that the preamplifier and the multiplier contribute the most to the output white noise, and the low-pass filter plays a major role in the output 1/f noise. These modules should be given priority in the optimization of the noise of the conditioning circuit. The above results provide technical support for the practical application of low-noise GMI magnetometers.

Drain current noise in GaN MOSFETs at THz generation conditions

2015 ◽  
Author(s):  
V. Gruzinskis ◽  
P. Shiktorov ◽  
E. Starikov ◽  
H. Marinchio ◽  
C. Palermo ◽  
...  
Keyword(s):  
Drain Current ◽  
Current Noise ◽  
Thz Generation
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