1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)
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Published By Japan Soc. Appl. Phys

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Dielectric breakdown mechanism of thin-SiO/sub 2/ studied by the post-breakdown resistance statistics

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) ◽

10.1109/vlsit.1999.799340 ◽

2003 ◽

Author(s):

H. Satake ◽

A. Toriumi

Keyword(s):

Dielectric Breakdown ◽

Breakdown Mechanism

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Device and reliability of high-k Al/sub 2/O/sub 3/ gate dielectric with good mobility and low D/sub it/

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) ◽

10.1109/vlsit.1999.799380 ◽

2003 ◽

Cited By ~ 13

Author(s):

A. Chin ◽

C.C. Liao ◽

C.H. Lu ◽

W.J. Chen ◽

C. Tsai

Keyword(s):

Gate Dielectric ◽

High K

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Minimizing body instability in deep sub-micron SOI MOSFETs for sub-1 V RF applications

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) ◽

10.1109/vlsit.1999.799323 ◽

2003 ◽

Cited By ~ 3

Author(s):

Y.-C. Tseng ◽

W.M. Huang ◽

M. Mendicino ◽

P. Welch ◽

V. Ilderem ◽

...

Keyword(s):

Rf Applications

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Re-distribution of Cu contamination in advanced high-speed CMOS and its influence on device characteristics

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) ◽

10.1109/vlsit.1999.799377 ◽

2003 ◽

Cited By ~ 2

Author(s):

K. Hozawa ◽

T. Itoga ◽

S. Isomae ◽

M. Ohkura

Keyword(s):

High Speed ◽

Cu Contamination

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A 0.15-μm/73-GHz f/sub max/ RF BiCMOS technology using cobalt silicide ring extrinsic-base structure

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) ◽

10.1109/vlsit.1999.799387 ◽

2003 ◽

Author(s):

H. Suzuki ◽

H. Yoshida ◽

Y. Kinoshita ◽

H. Fujii ◽

T. Yamazaki

Keyword(s):

Cobalt Silicide ◽

Bicmos Technology ◽

Extrinsic Base ◽

Base Structure

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A 0.10-μm CMOS device with a 40-nm gate sidewall and multilevel interconnects for system LSI

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) ◽

10.1109/vlsit.1999.799363 ◽

2003 ◽

Cited By ~ 1

Author(s):

H. Wakabayashi ◽

T. Yamamoto ◽

Y. Saito ◽

T. Ogura ◽

M. Narihiro ◽

...

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Low-temperature metal/ON/HSG-cylinder capacitor process for high density embedded DRAMs

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) ◽

10.1109/vlsit.1999.799391 ◽

2003 ◽

Cited By ~ 1

Author(s):

I. Yamamoto ◽

I. Honma ◽

T. Yamamoto ◽

K. Urabe ◽

K. Inoue ◽

...

Keyword(s):

Low Temperature ◽

High Density

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Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N/sub 2/O oxidation of NH/sub 3/-nitrided Si

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) ◽

10.1109/vlsit.1999.799381 ◽

2003 ◽

Author(s):

S.C. Song ◽

H.F. Luan ◽

C.H. Lee ◽

A.Y. Mao ◽

S.J. Lee ◽

...

Keyword(s):

Gate Dielectrics ◽

High Quality ◽

Nitride Oxide

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High performance Cu interconnects with low-k BCB-polymers by plasma-enhanced monomer-vapor polymerization (PE-MVP) method

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) ◽

10.1109/vlsit.1999.799332 ◽

2003 ◽

Cited By ~ 6

Author(s):

J. Kawahara ◽

A. Nakano ◽

S. Saito ◽

K. Kinoshita ◽

T. Onodera ◽

...

Keyword(s):

High Performance ◽

Cu Interconnects ◽

Low K

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High-integrity ultra-thin silicon nitride film grown at low temperature for extending scaling limit of gate dielectric

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) ◽

10.1109/vlsit.1999.799370 ◽

2003 ◽

Cited By ~ 6

Author(s):

K. Sekine ◽

Y. Saito ◽

M. Hirayama ◽

T. Ohmi

Keyword(s):

Silicon Nitride ◽

Low Temperature ◽

Gate Dielectric ◽

Scaling Limit ◽

Nitride Film ◽

Silicon Nitride Film ◽

High Integrity ◽

Thin Silicon

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1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Japan Soc. Appl. Phys

Dielectric breakdown mechanism of thin-SiO/sub 2/ studied by the post-breakdown resistance statistics

Device and reliability of high-k Al/sub 2/O/sub 3/ gate dielectric with good mobility and low D/sub it/

Minimizing body instability in deep sub-micron SOI MOSFETs for sub-1 V RF applications

Re-distribution of Cu contamination in advanced high-speed CMOS and its influence on device characteristics

A 0.15-μm/73-GHz f/sub max/ RF BiCMOS technology using cobalt silicide ring extrinsic-base structure

A 0.10-μm CMOS device with a 40-nm gate sidewall and multilevel interconnects for system LSI

Low-temperature metal/ON/HSG-cylinder capacitor process for high density embedded DRAMs

Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N/sub 2/O oxidation of NH/sub 3/-nitrided Si

High performance Cu interconnects with low-k BCB-polymers by plasma-enhanced monomer-vapor polymerization (PE-MVP) method

High-integrity ultra-thin silicon nitride film grown at low temperature for extending scaling limit of gate dielectric

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)
Latest Publications