DESIGN OF HIGH VOLTAGE 4H-SiC SUPERJUNCTION SCHOTTKY RECTIFIERS
2004 ◽
Vol 14
(03)
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pp. 865-871
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Keyword(s):
This paper presents a novel Schottky rectifier structure based on the superjunction approach, which is utilizes 2- and 3-D field shaping to increase the avalanche breakdown voltage. Device forward and blocking characteristics are analyzed with numerical simulations and compared with conventional 4 H - SiC Schottky rectifiers. Optimal design tradeoffs between breakdown voltage and specific on-resistance are obtained for high voltage 4 H - SiC superjunction Schottky rectifiers. The results show that the new structure can provide a 20 × lower R on,sp than conventional Schottky rectifier for 6kV device. In addition, device termination and possible fabrication steps for the superjunction devices are also presented.
2017 ◽
Vol 12
(07)
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pp. C07002-C07002
1981 ◽
Vol 24
(12)
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pp. 1155-1160
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1965 ◽
Vol 12
(4)
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pp. 231-231
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Keyword(s):
Keyword(s):
Keyword(s):
1972 ◽
Vol 32
(1)
◽
pp. 23-37
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1973 ◽
Vol 16
(4)
◽
pp. 459-466
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